AOT2144L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOT2144L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 187 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 68 nC
   trⓘ - Tiempo de subida: 9.5 nS
   Cossⓘ - Capacitancia de salida: 895 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm
   Paquete / Cubierta: TO-220

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AOT2144L Datasheet (PDF)

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aot2144l aob2144l.pdf

AOT2144L/AOB2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)

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aot2144l.pdf

AOT2144L/AOB2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)

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aot2144l.pdf

isc N-Channel MOSFET Transistor AOT2144LFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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aot2146l.pdf

AOT2146L/AOB2146LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

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aot2140l.pdf

AOT2140L/AOB2140LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

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aot2142l.pdf

AOT2142L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120A Low Gate Charge RDS(ON) (at VGS=10V)

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isc N-Channel MOSFET Transistor AOT2146LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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aot2140l.pdf

isc N-Channel MOSFET Transistor AOT2140LFEATURESDrain Current I = 195A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AOT600A60L

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