AOT2144L Specs and Replacement
Type Designator: AOT2144L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 187 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 895 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
Package: TO-220
AOT2144L substitution
- MOSFET ⓘ Cross-Reference Search
AOT2144L datasheet
aot2144l aob2144l.pdf
AOT2144L/AOB2144L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aot2144l aob2144l.pdf
AOT2144L/AOB2144L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aot2144l.pdf
AOT2144L/AOB2144L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aot2144l.pdf
isc N-Channel MOSFET Transistor AOT2144L FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
Detailed specifications: STD180N4F6, SUP65P06-20, SUB65P06-20, SVD3205T, SVF12N65F, SVF12N65T, TSP50N06M, TSF50N06M, 20N50, AOTF12N65L, AOTF2144L, AOTF25S65L, BUZ31H3046, DMG3N60SCT, DMN95H8D5HCT, DMP6180SK3-13, FCH040N65S3
Keywords - AOT2144L MOSFET specs
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History: MCT04P06 | SI1037X
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