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AOTF12N65L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOTF12N65L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 40 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 12 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 39.8 nC
   Tiempo de subida (tr): 77 nS
   Conductancia de drenaje-sustrato (Cd): 152 pF
   Resistencia entre drenaje y fuente RDS(on): 0.72 Ohm
   Paquete / Cubierta: TO-220F

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AOTF12N65L Datasheet (PDF)

 ..1. Size:250K  inchange semiconductor
aotf12n65l.pdf

AOTF12N65L AOTF12N65L

isc N-Channel MOSFET Transistor AOTF12N65LFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.72(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 5.1. Size:381K  aosemi
aotf12n65.pdf

AOTF12N65L AOTF12N65L

AOT12N65/AOTF12N65650V, 12A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT12N65 & AOTF12N65 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 5.2. Size:385K  aosemi
aot12n65 aotf12n65 aob12n65.pdf

AOTF12N65L AOTF12N65L

AOT12N65/AOTF12N65/AOB12N65650V, 12A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT12N65 & AOTF12N65 & AOB12N65 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 5.3. Size:250K  inchange semiconductor
aotf12n65.pdf

AOTF12N65L AOTF12N65L

isc N-Channel MOSFET Transistor AOTF12N65FEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.72(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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