BUZ31H3046 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUZ 31 H3046SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Normal Level. Pb-free lead plating; RoHs compliant. Halogen-free according to IEC61249-2-21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 31 H3046 200 V 14.5 A 0.2 PG-TO-262-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC =

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUZ31H3046FEATURESEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

BUZ31 H3045 A. Pb-free lead plating; RoHS compliant. Halogen-free according to IEC61249-2-21Pb-freePG-TO263-3BUZ31 H3045A YesRev 2.1 2009-11-09BUZ31 H3045 ARev 2.12009-11-09BUZ31 H3045 ARev 2.12009-11-09BUZ31 H3045 ARev 2.12009-11-09BUZ31 H3045 ARev 2.1 2009-11-09BUZ31 H3045 A2009-11-09Rev 2.1BUZ31 H3045 ARev 2.12009-11-09BUZ31 H3045 ARev

BUZ 31 HSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Normal Level. Pb-free lead plating; RoHs compliant. Halogen-free according to IEC61249-2-21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 31 H 200 V 14.5 A 0.2 PG-TO-220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 30 C

BUZ 310SIPMOS Power Transistor N channel Enhancement modePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 310 1000 V 2.5 A 5 TO-218 AA C67078-A3101-A2Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 1000 VVDGRDrain-gate voltageRGS = 20 k 1000Continuous drain current ID ATC = 25 C 2.5Pulsed drain current IDpul

BUZ 311SIPMOS Power Transistor N channel Enhancement modePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 311 1000 V 2.5 A 5 TO-218 AA C67078-A3102-A2Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 1000 VVDGRDrain-gate voltageRGS = 20 k 1000Continuous drain current ID ATC = 25 C 2.5Pulsed drain current IDpul

BUZ 312SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 312 1000 V 6 A 1.5 TO-218 AA C67078-S3129-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 33 C 6Pulsed drain current IDpulsTC = 25 C 24Avalanche current,limited by Tjmax IAR 6

BUZ 31LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 31 L 200 V 13.5 A 0.2 PG-TO220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 13.5Pulsed drain current IDpulsTC = 25 C 54Avalanche current,limited by Tjmax

BUZ 31SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Normal LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 31 200 V 14.5 A 0.2 PG-TO-220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 30 C 14.5Pulsed drain current IDpulsTC = 25 C 58Avalanche current,limited by Tjmax I

BUZ 31L HSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level. Halogen-free according to IEC61249-2-21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 31 L H 200 V 13.5 A 0.2 PG-TO220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 13.5Pulsed drain current IDpulsTC =

isc N-Channel Mosfet Transistor BUZ31FEATURESStatic Drain-Source On-Resistance: R = 0.2(Max)DS(on)High current capability150 operating temperatureHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC converters