BUZ31H3046 - описание и поиск аналогов

BUZ 31 H3046 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Normal Level . Pb-free lead plating; RoHs compliant . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 31 H3046 200 V 14.5 A 0.2 PG-TO-262-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC =

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUZ31H3046 FEATURES Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

BUZ31 H3045 A . Pb-free lead plating; RoHS compliant . Halogen-free according to IEC61249-2-21 Pb-free PG-TO263-3 BUZ31 H3045A Yes Rev 2.1 2009-11-09 BUZ31 H3045 A Rev 2.1 2009-11-09 BUZ31 H3045 A Rev 2.1 2009-11-09 BUZ31 H3045 A Rev 2.1 2009-11-09 BUZ31 H3045 A Rev 2.1 2009-11-09 BUZ31 H3045 A 2009-11-09 Rev 2.1 BUZ31 H3045 A Rev 2.1 2009-11-09 BUZ31 H3045 A Rev

BUZ 31 H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Normal Level . Pb-free lead plating; RoHs compliant . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 31 H 200 V 14.5 A 0.2 PG-TO-220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 C

BUZ 310 SIPMOS Power Transistor N channel Enhancement mode Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 310 1000 V 2.5 A 5 TO-218 AA C67078-A3101-A2 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 1000 V VDGR Drain-gate voltage RGS = 20 k 1000 Continuous drain current ID A TC = 25 C 2.5 Pulsed drain current IDpul

BUZ 311 SIPMOS Power Transistor N channel Enhancement mode Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 311 1000 V 2.5 A 5 TO-218 AA C67078-A3102-A2 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 1000 V VDGR Drain-gate voltage RGS = 20 k 1000 Continuous drain current ID A TC = 25 C 2.5 Pulsed drain current IDpul

BUZ 312 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 312 1000 V 6 A 1.5 TO-218 AA C67078-S3129-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 33 C 6 Pulsed drain current IDpuls TC = 25 C 24 Avalanche current,limited by Tjmax IAR 6

BUZ 31L SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 31 L 200 V 13.5 A 0.2 PG-TO220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 C 13.5 Pulsed drain current IDpuls TC = 25 C 54 Avalanche current,limited by Tjmax

BUZ 31 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Normal Level Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 31 200 V 14.5 A 0.2 PG-TO-220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 C 14.5 Pulsed drain current IDpuls TC = 25 C 58 Avalanche current,limited by Tjmax I

BUZ 31L H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 31 L H 200 V 13.5 A 0.2 PG-TO220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 C 13.5 Pulsed drain current IDpuls TC =

isc N-Channel Mosfet Transistor BUZ31 FEATURES Static Drain-Source On-Resistance R = 0.2 (Max) DS(on) High current capability 150 operating temperature High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current , high speed switching Solenoid and relay drivers DC-DC & DC-AC converters