DMP6180SK3-13 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMP6180SK3-13 Datasheet (PDF)

..1. Size:254K inchange semiconductor
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isc P-Channel MOSFET Transistor DMP6180SK3-13FEATURESStatic drain-source on-resistance:RDS(on)110m(@V = -10V; I = -12A)GS DAdvanced trench process technology100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower Management FunctionsDC / DC ConvertersABSOLUTE MAXIMUM RATINGS(T =25)

4.1. Size:188K diodes
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DMP6180SK360V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(on) max TC = +25C Low Input Capacitance Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 110m @ VGS = -10V -14A -60V Halogen and Antimony Free. Green Device (Note 3) 140m @ VGS = -4.5V -12A Qualified to AEC-Q101 Stand

4.2. Size:435K diodes
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DMP6180SK3Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS RDS(ON) Max TC = +25C Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 110m @ VGS = -10V -14A -60V Halogen and Antimony Free. Green Device (Note 3) 140m @ VGS = -4.5V -12A Qualified to AEC-Q101 Stand

4.3. Size:266K inchange semiconductor
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isc P-Channel MOSFET Transistor DMP6180SK3FEATURESDrain Current I = -14A@ T =25D CDrain Source Voltage-: V = -60V(Min)DSSStatic Drain-Source On-Resistance: R =110m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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