DMP6180SK3-13 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMP6180SK3-13 datasheet

..1. Size:254K inchange semiconductor
dmp6180sk3-13.pdf pdf_icon

isc P-Channel MOSFET Transistor DMP6180SK3-13 FEATURES Static drain-source on-resistance RDS(on) 110m (@V = -10V; I = -12A) GS D Advanced trench process technology 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power Management Functions DC / DC Converters ABSOLUTE MAXIMUM RATINGS(T =25 )

4.1. Size:188K diodes
dmp6180sk3.pdf pdf_icon

DMP6180SK3 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25 C Low Input Capacitance Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 110m @ VGS = -10V -14A -60V Halogen and Antimony Free. Green Device (Note 3) 140m @ VGS = -4.5V -12A Qualified to AEC-Q101 Stand

4.2. Size:435K diodes
dmp6180sk3q.pdf pdf_icon

DMP6180SK3Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS RDS(ON) Max TC = +25 C Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 110m @ VGS = -10V -14A -60V Halogen and Antimony Free. Green Device (Note 3) 140m @ VGS = -4.5V -12A Qualified to AEC-Q101 Stand

4.3. Size:266K inchange semiconductor
dmp6180sk3.pdf pdf_icon

isc P-Channel MOSFET Transistor DMP6180SK3 FEATURES Drain Current I = -14A@ T =25 D C Drain Source Voltage- V = -60V(Min) DSS Static Drain-Source On-Resistance R =110m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

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