FCP099N60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCP099N60E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 357 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 37 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 75 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.099 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de FCP099N60E MOSFET
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FCP099N60E datasheet
fcp099n60e.pdf
June 2016 FCP099N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 37 A, 99 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 87 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 88nC)
fcp099n60e.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcp099n60e.pdf
isc N-Channel MOSFET Transistor FCP099N60E FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P
fcp099n65s3.pdf
FCP099N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 99 mW @ 10 V 30 A charge performance. This advanced
Otros transistores... AOTF25S65L , BUZ31H3046 , DMG3N60SCT , DMN95H8D5HCT , DMP6180SK3-13 , FCH040N65S3 , FCH099N60E , FCH099N65S3 , STP65NF06 , FCP125N60E , FCP165N60E , FCP260N65S3 , FCP850N80Z , FCPF067N65S3 , FCPF150N65F , FCPF165N65S3L1 , FCPF250N65S3L1 .
History: 2SK3364-01 | IRF8010S | 2SK3857MFV
History: 2SK3364-01 | IRF8010S | 2SK3857MFV
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