Справочник MOSFET. FCP099N60E

 

FCP099N60E Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FCP099N60E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 357 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 37 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 23 ns
   Cossⓘ - Выходная емкость: 75 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.099 Ohm
   Тип корпуса: TO-220
     - подбор MOSFET транзистора по параметрам

 

FCP099N60E Datasheet (PDF)

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FCP099N60E

June 2016FCP099N60EN-Channel SuperFET II Easy-Drive MOSFET600 V, 37 A, 99 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 87 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 88nC)

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FCP099N60E

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:257K  inchange semiconductor
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FCP099N60E

isc N-Channel MOSFET Transistor FCP099N60EFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

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fcp099n65s3.pdfpdf_icon

FCP099N60E

FCP099N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 30 A, 99 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 99 mW @ 10 V 30 Acharge performance. This advanced

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History: AP040N03G | AO4862E | IPD50R280CE | TSP10N60M | AP2325GEN | NDT6N70 | SI3586DV

 

 
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