FCP099N60E - описание и поиск аналогов

June 2016 FCP099N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 37 A, 99 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 87 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 88nC)

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FCP099N60E FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

FCP099N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 99 mW @ 10 V 30 A charge performance. This advanced

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCP099N65S3 FEATURES With TO-220 packaging Low switching loss Ultra low gate charge Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications DC-DC converters Uninterruptible power supply ABSOLUTE MAXIMUM RAT