FCP125N60E Todos los transistores

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 fcp125n60e.pdf

November 2015 FCP125N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 29 A, 125 m Features Description 650 V @TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 102 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 7

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 fcp125n60e.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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 fcp125n60e.pdf

isc N-Channel MOSFET Transistor FCP125N60E FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

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 fcp125n65s3r0.pdf

FCP125N65S3R0 MOSFET Power, N-Channel, SUPERFET) III, Easy Drive 650 V, 24 A, 125 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailo

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 fcp125n65s3.pdf

FCP125N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 125 mW @ 10 V 24 A charge performance. This advanc

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 fcp125n65s3.pdf

isc N-Channel MOSFET Transistor FCP125N65S3 FEATURES Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 125m (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters AC and DC Mot

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 fcp125n65s.pdf

isc N-Channel MOSFET Transistor FCP125N65S FEATURES Static drain-source on-resistance RDS(on) 2.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications ABSOLUTE MAXIMUM RATI