FCP125N60E Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FCP125N60E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 278 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 29 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 60 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.125 Ohm
Тип корпуса: TO-220
- подбор MOSFET транзистора по параметрам
FCP125N60E Datasheet (PDF)
fcp125n60e.pdf

November 2015FCP125N60EN-Channel SuperFET II Easy-Drive MOSFET600 V, 29 A, 125 mFeatures Description 650 V @TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 102 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 7
fcp125n60e.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcp125n60e.pdf

isc N-Channel MOSFET Transistor FCP125N60EFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
fcp125n65s3r0.pdf

FCP125N65S3R0MOSFET Power, N-Channel,SUPERFET) III, Easy Drive650 V, 24 A, 125 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailo
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History: AP9997AGH-HF | 2N7000P | NDT6N70 | IRF2804SPBF | KNY3204A | IPD50R280CE | APT53N60BC6
History: AP9997AGH-HF | 2N7000P | NDT6N70 | IRF2804SPBF | KNY3204A | IPD50R280CE | APT53N60BC6



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