FCP165N60E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCP165N60E  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 227 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.165 Ohm

Encapsulados: TO-220

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FCP165N60E datasheet

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FCP165N60E

December 2015 FCP165N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 23 A, 165 m Features Description 650 V @TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 132 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 5

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FCP165N60E

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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FCP165N60E

isc N-Channel MOSFET Transistor FCP165N60E FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

 6.1. Size:379K  onsemi
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FCP165N60E

FCP165N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 19 A, 165 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 165 mW @ 10 V 19 A charge performance. This advanc

Otros transistores... DMG3N60SCT, DMN95H8D5HCT, DMP6180SK3-13, FCH040N65S3, FCH099N60E, FCH099N65S3, FCP099N60E, FCP125N60E, 7N60, FCP260N65S3, FCP850N80Z, FCPF067N65S3, FCPF150N65F, FCPF165N65S3L1, FCPF250N65S3L1, FDA44N50, FDI036N10A