FCP165N60E Specs and Replacement
Type Designator: FCP165N60E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
Package: TO-220
FCP165N60E substitution
- MOSFET ⓘ Cross-Reference Search
FCP165N60E datasheet
fcp165n60e.pdf
December 2015 FCP165N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 23 A, 165 m Features Description 650 V @TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 132 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 5... See More ⇒
fcp165n60e.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fcp165n60e.pdf
isc N-Channel MOSFET Transistor FCP165N60E FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
fcp165n65s3.pdf
FCP165N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 19 A, 165 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 165 mW @ 10 V 19 A charge performance. This advanc... See More ⇒
Detailed specifications: DMG3N60SCT, DMN95H8D5HCT, DMP6180SK3-13, FCH040N65S3, FCH099N60E, FCH099N65S3, FCP099N60E, FCP125N60E, 7N60, FCP260N65S3, FCP850N80Z, FCPF067N65S3, FCPF150N65F, FCPF165N65S3L1, FCPF250N65S3L1, FDA44N50, FDI036N10A
Keywords - FCP165N60E MOSFET specs
FCP165N60E cross reference
FCP165N60E equivalent finder
FCP165N60E pdf lookup
FCP165N60E substitution
FCP165N60E replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E
Popular searches
bdx53c | k3563 | d882p | 2sb1560 | 2n1304 | 2sa979 | 2sc4793 | d965
