FCP165N60E PDF and Equivalents Search

 

FCP165N60E Specs and Replacement

Type Designator: FCP165N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 227 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm

Package: TO-220

FCP165N60E substitution

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FCP165N60E datasheet

 ..1. Size:757K  1
fcp165n60e.pdf pdf_icon

FCP165N60E

December 2015 FCP165N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 23 A, 165 m Features Description 650 V @TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 132 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 5... See More ⇒

 ..2. Size:800K  onsemi
fcp165n60e.pdf pdf_icon

FCP165N60E

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..3. Size:257K  inchange semiconductor
fcp165n60e.pdf pdf_icon

FCP165N60E

isc N-Channel MOSFET Transistor FCP165N60E FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒

 6.1. Size:379K  onsemi
fcp165n65s3.pdf pdf_icon

FCP165N60E

FCP165N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 19 A, 165 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 165 mW @ 10 V 19 A charge performance. This advanc... See More ⇒

Detailed specifications: DMG3N60SCT, DMN95H8D5HCT, DMP6180SK3-13, FCH040N65S3, FCH099N60E, FCH099N65S3, FCP099N60E, FCP125N60E, 7N60, FCP260N65S3, FCP850N80Z, FCPF067N65S3, FCPF150N65F, FCPF165N65S3L1, FCPF250N65S3L1, FDA44N50, FDI036N10A

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