FCP850N80Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCP850N80Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 136 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 28 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
Encapsulados: TO-220
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FCP850N80Z datasheet
fcp850n80z.pdf
December 2015 FCP850N80Z N-Channel SuperFET II MOSFET 800 V, 8 A, 850 m Features Description Typ. RDS(on) = 710 m Typ.) SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 22 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ
fcp850n80z.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcp850n80z.pdf
isc N-Channel MOSFET Transistor FCP850N80Z FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P
Otros transistores... DMP6180SK3-13 , FCH040N65S3 , FCH099N60E , FCH099N65S3 , FCP099N60E , FCP125N60E , FCP165N60E , FCP260N65S3 , IRFZ46N , FCPF067N65S3 , FCPF150N65F , FCPF165N65S3L1 , FCPF250N65S3L1 , FDA44N50 , FDI036N10A , FDP8D5N10C , FDPF8D5N10C .
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