FCP850N80Z Specs and Replacement
Type Designator: FCP850N80Z
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 28 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220
FCP850N80Z substitution
- MOSFET ⓘ Cross-Reference Search
FCP850N80Z datasheet
fcp850n80z.pdf
December 2015 FCP850N80Z N-Channel SuperFET II MOSFET 800 V, 8 A, 850 m Features Description Typ. RDS(on) = 710 m Typ.) SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 22 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ... See More ⇒
fcp850n80z.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fcp850n80z.pdf
isc N-Channel MOSFET Transistor FCP850N80Z FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
Detailed specifications: DMP6180SK3-13, FCH040N65S3, FCH099N60E, FCH099N65S3, FCP099N60E, FCP125N60E, FCP165N60E, FCP260N65S3, IRFZ46N, FCPF067N65S3, FCPF150N65F, FCPF165N65S3L1, FCPF250N65S3L1, FDA44N50, FDI036N10A, FDP8D5N10C, FDPF8D5N10C
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