FCPF165N65S3L1 Todos los transistores

 ..1. Size:289K  1
 fcpf165n65s3l1.pdf

FCPF165N65S3L1 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 165 mW @ 10 V 19 A charge performance. This adv

 ..2. Size:320K  onsemi
 fcpf165n65s3l1.pdf

FCPF165N65S3L1 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 165 mW @ 10 V 19 A charge performance. This adv

 ..3. Size:247K  inchange semiconductor
 fcpf165n65s3l1.pdf

isc N-Channel MOSFET Transistor FCPF165N65S3L1 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

 2.1. Size:328K  onsemi
 fcpf165n65s3r0l.pdf

FCPF165N65S3R0L MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailo

 8.1. Size:639K  fairchild semi
 fcp16n60 fcpf16n60.pdf

August 2014 FCP16N60 / FCPF16N60 N-Channel SuperFET MOSFET 600 V, 16 A, 260 m Features Description SuperFET MOSFET is Fairchild Semiconductor s first genera- 650V @ TJ = 150 C tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 220 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 55 nC ) r

 8.2. Size:685K  fairchild semi
 fcp16n60n fcpf16n60nt.pdf

August 2009 SupreMOSTM FCP16N60N / FCPF16N60NT N-Channel MOSFET 600V, 16A, 0.170 Features Description RDS(on) = 0.17 ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 40.2nC) process that differentiates it from preceding multi-epi based te

 8.3. Size:1208K  fairchild semi
 fcp16n60 fcpf16n60.pdf

December 2008 TM SuperFET FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on) = 0.22 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perfo

 8.4. Size:750K  onsemi
 fcp16n60n fcpf16n60nt.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.5. Size:668K  onsemi
 fcp16n60 fcpf16n60.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.6. Size:222K  inchange semiconductor
 fcpf16n60.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCPF16N60 FEATURES Drain-source on-resistance RDS(on) 0.26 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Be suitable for various AC/DC power conversion in switching mode operation for system miniaturization and

 8.7. Size:257K  inchange semiconductor
 fcpf16n60nt.pdf

isc N-Channel MOSFET Transistor FCPF16N60NT FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL