Справочник MOSFET. FCPF165N65S3L1

 

FCPF165N65S3L1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FCPF165N65S3L1
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 19 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 35 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.165 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для FCPF165N65S3L1

 

 

FCPF165N65S3L1 Datasheet (PDF)

 ..1. Size:289K  1
fcpf165n65s3l1.pdf

FCPF165N65S3L1
FCPF165N65S3L1

FCPF165N65S3L1MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 19 A, 165 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 165 mW @ 10 V 19 Acharge performance. This adv

 ..2. Size:320K  onsemi
fcpf165n65s3l1.pdf

FCPF165N65S3L1
FCPF165N65S3L1

FCPF165N65S3L1MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 19 A, 165 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 165 mW @ 10 V 19 Acharge performance. This adv

 ..3. Size:247K  inchange semiconductor
fcpf165n65s3l1.pdf

FCPF165N65S3L1
FCPF165N65S3L1

isc N-Channel MOSFET Transistor FCPF165N65S3L1FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

 2.1. Size:328K  onsemi
fcpf165n65s3r0l.pdf

FCPF165N65S3L1
FCPF165N65S3L1

FCPF165N65S3R0LMOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 19 A, 165 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailo

 8.1. Size:639K  fairchild semi
fcp16n60 fcpf16n60.pdf

FCPF165N65S3L1
FCPF165N65S3L1

August 2014FCP16N60 / FCPF16N60N-Channel SuperFET MOSFET600 V, 16 A, 260 mFeatures DescriptionSuperFET MOSFET is Fairchild Semiconductors first genera- 650V @ TJ = 150Ction of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 220 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 55 nC )r

 8.2. Size:685K  fairchild semi
fcp16n60n fcpf16n60nt.pdf

FCPF165N65S3L1
FCPF165N65S3L1

August 2009SupreMOSTMFCP16N60N / FCPF16N60NT N-Channel MOSFET600V, 16A, 0.170Features Description RDS(on) = 0.17 ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 40.2nC)process that differentiates it from preceding multi-epi basedte

 8.3. Size:1208K  fairchild semi
fcp16n60 fcpf16n60.pdf

FCPF165N65S3L1
FCPF165N65S3L1

December 2008 TMSuperFETFCP16N60 / FCPF16N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on) = 0.22balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perfo

 8.4. Size:750K  onsemi
fcp16n60n fcpf16n60nt.pdf

FCPF165N65S3L1
FCPF165N65S3L1

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.5. Size:668K  onsemi
fcp16n60 fcpf16n60.pdf

FCPF165N65S3L1
FCPF165N65S3L1

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.6. Size:222K  inchange semiconductor
fcpf16n60.pdf

FCPF165N65S3L1
FCPF165N65S3L1

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCPF16N60FEATURES Drain-source on-resistance:RDS(on) 0.26@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe suitable for various AC/DC power conversion in switching modeoperation for system miniaturization and

 8.7. Size:257K  inchange semiconductor
fcpf16n60nt.pdf

FCPF165N65S3L1
FCPF165N65S3L1

isc N-Channel MOSFET Transistor FCPF16N60NTFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

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