FQD50P06 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FQD50P06 datasheet

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isc P-Channel MOSFET Transistor FQD50P06 FEATURES Drain Current I = -50A@ T =25 D C Drain Source Voltage- V = -60V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max)@V = -10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for high current switching applications. A

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FQD50N06 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit U

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isc N-Channel MOSFET Transistor FQD50N06 FEATURES Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 22m (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed switching Switch mode power supplies DC-DC converters

Otros transistores... FCPF165N65S3L1 , FCPF250N65S3L1 , FDA44N50 , FDI036N10A , FDP8D5N10C , FDPF8D5N10C , FMW60N190S2HF , FQD50N06 , AO4407A , IPA030N10N3 , IPA037N08N3 , IPA045N10N3 , IPA057N08N3 , IPA086N10N3 , IPA60R180C7 , IPA60R360P7 , IPAN60R650CE .