FQD50P06 - параметры транзистора MOSFET, его аналоги, datasheet

FQD50P06 Datasheet (PDF)

..1. Size:253K inchange semiconductor
fqd50p06.pdf pdf_icon

isc P-Channel MOSFET Transistor FQD50P06FEATURESDrain Current I = -50A@ T =25D CDrain Source Voltage-: V = -60V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)@V = -10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high current switching applications.A

9.1. Size:860K cn vbsemi
fqd50n06.pdf pdf_icon

FQD50N06www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit U

9.2. Size:249K inchange semiconductor
fqd50n06.pdf pdf_icon

isc N-Channel MOSFET Transistor FQD50N06FEATURESDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 22m(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current , high speed switchingSwitch mode power suppliesDC-DC converters

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .