IPA086N10N3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPA086N10N3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 37.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 523 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0086 Ohm
Encapsulados: TO-220FP
Búsqueda de reemplazo de IPA086N10N3 MOSFET
- Selecciónⓘ de transistores por parámetros
IPA086N10N3 datasheet
ipa086n10n3.pdf
isc N-Channel MOSFET Transistor IPA086N10N3,IIPA086N10N3 FEATURES Low drain-source on-resistance RDS(on) 4.5m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
ipa086n10n3g.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 100V OptiMOS 3 Power-Transistor IPA086N10N3 G Data Sheet Rev. 2.4 Final Power Management & Multimarket IPA086N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 8.6 mW Excellent gate charge x R product (FOM) DS(on) ID 45 A
ipa083n10n5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPA083N10N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPA083N10N5 TO-220-FP 1 Description Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resista
ipa083n10nm5s.pdf
IPA083N10NM5S MOSFET PG-TO 220 FP OptiMOSTM 5 Power-Transistor, 100 V Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Qualified
Otros transistores... FDPF8D5N10C , FMW60N190S2HF , FQD50N06 , FQD50P06 , IPA030N10N3 , IPA037N08N3 , IPA045N10N3 , IPA057N08N3 , IRFZ44N , IPA60R180C7 , IPA60R360P7 , IPAN60R650CE , IPB048N15N5 , IPI030N10N3 , IPI037N08N3 , IPI041N12N3 , IPI051N15N5 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
2sd468 | c2240 transistor | 2sc1918 | c1213 transistor | 2sc1400 replacement | 2sb817 | mn2488 datasheet | c2026 transistor
