IPA086N10N3 Todos los transistores

 

IPA086N10N3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPA086N10N3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 37.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 523 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0086 Ohm

Encapsulados: TO-220FP

 Búsqueda de reemplazo de IPA086N10N3 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IPA086N10N3 datasheet

 ..1. Size:256K  inchange semiconductor
ipa086n10n3.pdf pdf_icon

IPA086N10N3

isc N-Channel MOSFET Transistor IPA086N10N3,IIPA086N10N3 FEATURES Low drain-source on-resistance RDS(on) 4.5m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 0.1. Size:529K  infineon
ipa086n10n3g.pdf pdf_icon

IPA086N10N3

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 100V OptiMOS 3 Power-Transistor IPA086N10N3 G Data Sheet Rev. 2.4 Final Power Management & Multimarket IPA086N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 8.6 mW Excellent gate charge x R product (FOM) DS(on) ID 45 A

 9.1. Size:1811K  infineon
ipa083n10n5.pdf pdf_icon

IPA086N10N3

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPA083N10N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPA083N10N5 TO-220-FP 1 Description Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resista

 9.2. Size:1057K  infineon
ipa083n10nm5s.pdf pdf_icon

IPA086N10N3

IPA083N10NM5S MOSFET PG-TO 220 FP OptiMOSTM 5 Power-Transistor, 100 V Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Qualified

Otros transistores... FDPF8D5N10C , FMW60N190S2HF , FQD50N06 , FQD50P06 , IPA030N10N3 , IPA037N08N3 , IPA045N10N3 , IPA057N08N3 , IRFZ44N , IPA60R180C7 , IPA60R360P7 , IPAN60R650CE , IPB048N15N5 , IPI030N10N3 , IPI037N08N3 , IPI041N12N3 , IPI051N15N5 .

 

 

 

 

↑ Back to Top
.