IPA086N10N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPA086N10N3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 523 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0086 Ohm
   Paquete / Cubierta: TO-220FP

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IPA086N10N3 Datasheet (PDF)

..1. Size:256K inchange semiconductor
ipa086n10n3.pdf

isc N-Channel MOSFET Transistor IPA086N10N3,IIPA086N10N3FEATURESLow drain-source on-resistance:RDS(on) 4.5m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

0.1. Size:529K infineon
ipa086n10n3g.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOS Power-Transistor, 100VOptiMOS3 Power-TransistorIPA086N10N3 GData SheetRev. 2.4FinalPower Management & MultimarketIPA086N10N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max 8.6 mW Excellent gate charge x R product (FOM)DS(on)ID 45 A

9.1. Size:1811K infineon
ipa083n10n5.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 100 VIPA083N10N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 100 VIPA083N10N5TO-220-FP1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resista

9.2. Size:1057K infineon
ipa083n10nm5s.pdf

IPA083N10NM5SMOSFETPG-TO 220 FPOptiMOSTM 5 Power-Transistor, 100 VFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified

9.3. Size:201K inchange semiconductor
ipa083n10n5.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA083N10N5FEATURESWith To-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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