IPA086N10N3 - Даташиты. Аналоги. Основные параметры

isc N-Channel MOSFET Transistor IPA086N10N3,IIPA086N10N3FEATURESLow drain-source on-resistance:RDS(on) 4.5m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOS Power-Transistor, 100VOptiMOS3 Power-TransistorIPA086N10N3 GData SheetRev. 2.4FinalPower Management & MultimarketIPA086N10N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max 8.6 mW Excellent gate charge x R product (FOM)DS(on)ID 45 A

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 100 VIPA083N10N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 100 VIPA083N10N5TO-220-FP1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resista

IPA083N10NM5SMOSFETPG-TO 220 FPOptiMOSTM 5 Power-Transistor, 100 VFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA083N10N5FEATURESWith To-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT