IPI037N08N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPI037N08N3
   Código: 037N08N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 214 W
   Voltaje máximo drenador - fuente |Vds|: 80 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 100 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
   Carga de la puerta (Qg): 88 nC
   Tiempo de subida (tr): 79 nS
   Conductancia de drenaje-sustrato (Cd): 1640 pF
   Resistencia entre drenaje y fuente RDS(on): 0.00375 Ohm
   Paquete / Cubierta: TO-262

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IPI037N08N3 Datasheet (PDF)

..1. Size:261K inchange semiconductor
ipi037n08n3.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPI037N08N3FEATURESStatic drain-source on-resistance:RDS(on) 3.75mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS

0.1. Size:1018K infineon
ipp037n08n3ge8181 ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf

IPP037N08N3 G IPI037N08N3 GIPB035N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m xQ ( @D9=9J54 D538>?F5BD5BCI 1 DQ H3579>55B9>7 3?45 Q .5BI B5C9CD1>35 +D n)#) ' ' !Q ' 381>>5?B=1

0.2. Size:494K infineon
ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf

IPP037N08N3 G IPI037N08N3 GIPB035N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS Ideal for high frequency switching and sync. rec.R 3.5mDS(on),max Optimized technology for DC/DC convertersI 100 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested

6.1. Size:475K infineon
ipb034n06l3g ipi037n06l3g ipp037n06l3g.pdf

Type IPB034N06L3 G IPI037N06L3 GIPP037N06L3 GProduct SummaryOptiMOS3 Power-TransistorV 60 VDSFeaturesR 3.4mDS(on),max (SMD) Ideal for high frequency switching and sync. rec.I 90 AD Optimized technology for DC/DC convertersprevious engineering Excellent gate charge x R product (FOM)DS(on)sample codes: Very low on-resistance RDS(on)IPP04xN06

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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