All MOSFET. IPI037N08N3 Datasheet

 

IPI037N08N3 Datasheet and Replacement


   Type Designator: IPI037N08N3
   Marking Code: 037N08N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 88 nC
   tr ⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 1640 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00375 Ohm
   Package: TO-262
 

 IPI037N08N3 substitution

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IPI037N08N3 Datasheet (PDF)

 ..1. Size:261K  inchange semiconductor
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IPI037N08N3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPI037N08N3FEATURESStatic drain-source on-resistance:RDS(on) 3.75mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS

 0.1. Size:1018K  infineon
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IPI037N08N3

IPP037N08N3 G IPI037N08N3 GIPB035N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m xQ ( @D9=9J54 D538>?F5BD5BCI 1 DQ H3579>55B9>7 3?45 Q .5BI B5C9CD1>35 +D n)#) ' ' !Q ' 381>>5?B=1

 0.2. Size:494K  infineon
ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf pdf_icon

IPI037N08N3

IPP037N08N3 G IPI037N08N3 GIPB035N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS Ideal for high frequency switching and sync. rec.R 3.5mDS(on),max Optimized technology for DC/DC convertersI 100 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested

 6.1. Size:475K  infineon
ipb034n06l3g ipi037n06l3g ipp037n06l3g.pdf pdf_icon

IPI037N08N3

Type IPB034N06L3 G IPI037N06L3 GIPP037N06L3 GProduct SummaryOptiMOS3 Power-TransistorV 60 VDSFeaturesR 3.4mDS(on),max (SMD) Ideal for high frequency switching and sync. rec.I 90 AD Optimized technology for DC/DC convertersprevious engineering Excellent gate charge x R product (FOM)DS(on)sample codes: Very low on-resistance RDS(on)IPP04xN06

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRF1404

Keywords - IPI037N08N3 MOSFET datasheet

 IPI037N08N3 cross reference
 IPI037N08N3 equivalent finder
 IPI037N08N3 lookup
 IPI037N08N3 substitution
 IPI037N08N3 replacement

 

 
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