IPI037N08N3 MOSFET Datasheet: N-Ch, 80V, 100A. Full specification with pinout and replacement list

IPI037N08N3 Specs and Replacement

Type Designator: IPI037N08N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 79 nS

Cossⓘ - Output Capacitance: 1640 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00375 Ohm

Package: TO-262

IPI037N08N3 substitution

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IPI037N08N3 datasheet

..1. Size:261K inchange semiconductor
ipi037n08n3.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPI037N08N3 FEATURES Static drain-source on-resistance RDS(on) 3.75m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS... See More ⇒

0.1. Size:1018K infineon
ipp037n08n3ge8181 ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf pdf_icon

IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I 1 D Q H3579>55B9>7 3?45 Q .5BI B5C9CD1>35 + D n) #) ' ' ! Q ' 381>>5?B=1... See More ⇒

0.2. Size:494K infineon
ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf pdf_icon

IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS Ideal for high frequency switching and sync. rec. R 3.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested ... See More ⇒

6.1. Size:475K infineon
ipb034n06l3g ipi037n06l3g ipp037n06l3g.pdf pdf_icon

Type IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G Product Summary OptiMOS 3 Power-Transistor V 60 V DS Features R 3.4 m DS(on),max (SMD) Ideal for high frequency switching and sync. rec. I 90 A D Optimized technology for DC/DC converters previous engineering Excellent gate charge x R product (FOM) DS(on) sample codes Very low on-resistance RDS(on) IPP04xN06... See More ⇒

Detailed specifications: IPA045N10N3, IPA057N08N3, IPA086N10N3, IPA60R180C7, IPA60R360P7, IPAN60R650CE, IPB048N15N5, IPI030N10N3, IRF540, IPI041N12N3, IPI051N15N5, IPI072N10N3, IPI075N15N3, IPI076N12N3, IPI076N15N5, IPI086N10N3, IPI100N08N3