IPI051N15N5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPI051N15N5
Código: 051N15N5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 300 W
Voltaje máximo drenador - fuente |Vds|: 150 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 120 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.6 V
Carga de la puerta (Qg): 80 nC
Tiempo de subida (tr): 5.3 nS
Conductancia de drenaje-sustrato (Cd): 1500 pF
Resistencia entre drenaje y fuente RDS(on): 0.0051 Ohm
Paquete / Cubierta: TO-262
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IPI051N15N5 Datasheet (PDF)
ipi051n15n5.pdf
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IPI051N15N5MOSFETI-PAKOptiMOS5 Power-Transistor, 150 VFeatures tabPackage Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant1 Qualified according to JEDEC1) for target application23 Ideal for high-frequency switching and synchronous rectification
ipi051n15n5.pdf
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IPI051N15N5MOSFETI-PAKOptiMOS5 Power-Transistor, 150 VFeatures tabPackage Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant1 Qualified according to JEDEC1) for target application23 Ideal for high-frequency switching and synchronous rectification
ipi051n15n5.pdf
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isc N-Channel MOSFET Transistor IPI051N15N5FEATURESStatic drain-source on-resistance:RDS(on) 5.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSY
ipp05cn10n ipp05cn10n ipb05cn10n-g ipi05cn10n-g.pdf
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IPB05CN10N G IPI05CN10N GIPP05CN10N G 2 Power-TransistorProduct SummaryFeaturesV 100 VDSR ( 492??6= ?@C>2= =6G6=R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on)I 100 ADR /6CJ =@H @? C6D:DE2?46 RDS(on)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7
ipp052ne7n3 ipi052ne7n3.pdf
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ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf
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IPP057N08N3 G IPI057N08N3 GIPB054N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS N-channel, normal levelR 5.4mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 80 AD Very low on-resistance RDS(on)previous engineering 175 C operating temperaturesample codes:IPP06CN08N Pb-free lead plating; RoHS complia
ipp052ne7n3g ipi052ne7n3g.pdf
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## ! ! # ! ! TM #:A0 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BCDQ H35
ipp057n08n3g ipi057n08n3g ipb054n08n3g.pdf
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IPP057N08N3 G IPI057N08N3 GIPB054N08N3 G 3 Power-TransistorProduct SummaryFeaturesV 80 VDSQ ' 381>>5?B=1
ipb051ne8n-g ipi05cne8n-g ipp054ne8n-g.pdf
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IPB051NE8N G IPI05CNE8N GIPP054NE8N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 85 VDS N-channel, normal levelR 5.1mDS(on),max (TO 263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target
ipi05cn10n.pdf
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isc N-Channel MOSFET Transistor IPI05CN10NFEATURESStatic drain-source on-resistance:RDS(on) 5.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Liste
Recientemente añadidas las descripciónes de los transistores:
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