IPI051N15N5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPI051N15N5
Маркировка: 051N15N5
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 300 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4.6 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 80 nC
Время нарастания (tr): 5.3 ns
Выходная емкость (Cd): 1500 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0051 Ohm
Тип корпуса: TO-262
Аналог (замена) для IPI051N15N5
IPI051N15N5 Datasheet (PDF)
ipi051n15n5.pdf
IPI051N15N5MOSFETI-PAKOptiMOS5 Power-Transistor, 150 VFeatures tabPackage Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant1 Qualified according to JEDEC1) for target application23 Ideal for high-frequency switching and synchronous rectification
ipi051n15n5.pdf
IPI051N15N5MOSFETI-PAKOptiMOS5 Power-Transistor, 150 VFeatures tabPackage Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant1 Qualified according to JEDEC1) for target application23 Ideal for high-frequency switching and synchronous rectification
ipi051n15n5.pdf
isc N-Channel MOSFET Transistor IPI051N15N5FEATURESStatic drain-source on-resistance:RDS(on) 5.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSY
ipp05cn10n ipp05cn10n ipb05cn10n-g ipi05cn10n-g.pdf
IPB05CN10N G IPI05CN10N GIPP05CN10N G 2 Power-TransistorProduct SummaryFeaturesV 100 VDSR ( 492??6= ?@C>2= =6G6=R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on)I 100 ADR /6CJ =@H @? C6D:DE2?46 RDS(on)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7
ipp052ne7n3 ipi052ne7n3.pdf
## ! ! # ! ! TM #:A0 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BCDQ H35
ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf
IPP057N08N3 G IPI057N08N3 GIPB054N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS N-channel, normal levelR 5.4mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 80 AD Very low on-resistance RDS(on)previous engineering 175 C operating temperaturesample codes:IPP06CN08N Pb-free lead plating; RoHS complia
ipp052ne7n3g ipi052ne7n3g.pdf
## ! ! # ! ! TM #:A0 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BCDQ H35
ipp057n08n3g ipi057n08n3g ipb054n08n3g.pdf
IPP057N08N3 G IPI057N08N3 GIPB054N08N3 G 3 Power-TransistorProduct SummaryFeaturesV 80 VDSQ ' 381>>5?B=1
ipb051ne8n-g ipi05cne8n-g ipp054ne8n-g.pdf
IPB051NE8N G IPI05CNE8N GIPP054NE8N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 85 VDS N-channel, normal levelR 5.1mDS(on),max (TO 263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target
ipi05cn10n.pdf
isc N-Channel MOSFET Transistor IPI05CN10NFEATURESStatic drain-source on-resistance:RDS(on) 5.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
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