IPI600N25N3 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPI600N25N3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPI600N25N3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 136 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 112 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: TO-262

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IPI600N25N3 datasheet

..1. Size:271K inchange semiconductor
ipi600n25n3.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI600N25N3 FEATURES Static drain-source on-resistance RDS(on) 60m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

0.1. Size:689K infineon
ipb600n25n3g ipp600n25n3g ipi600n25n3g ipp600n25n3g ipb600n25n3g ipi600n25n3g.pdf pdf_icon

9.1. Size:1201K infineon
ipi60r380c6.pdf pdf_icon

MOSFET + =L9D - PA

9.2. Size:325K infineon
ipi60r099cpa.pdf pdf_icon

IPI60R099CPA CoolMOSTM Power Transistor Product Summary V 600 V DS R 0.105 DS(on),max Q 60 nC g,typ Features Worldwide best Rds,on in TO262 Ultra low gate charge PG-TO262-3-1 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for DC/DC converters for A

9.3. Size:547K infineon
ipi60r165cp.pdf pdf_icon

IPI60R165CP C IMOS # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO262 7!"%

9.4. Size:1495K infineon
ipi60r190c6.pdf pdf_icon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according

9.5. Size:620K infineon
ipi60r099cp.pdf pdf_icon

IPI60R099CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Worldwide best R in TO220 ds,on R 0.099 DS(on),max Ultra low gate charge Q 60 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO262-3-1 Pb-free lead plating; RoHS compliant CoolMOS CP is specially

9.6. Size:541K infineon
ipi60r600cp.pdf pdf_icon

IPI60R600CP C IMOSTM # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO262

9.7. Size:317K infineon
ipi60r385cp.pdf pdf_icon

IPI60R385CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Lowest figure-of-merit RON x Qg R 0.385 DS(on),max Ultra low gate charge Q 17 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO262 Pb-free lead plating; RoHS compliant CoolMOS CP is specially desig

9.8. Size:550K infineon
ipi60r199cpa.pdf pdf_icon

IPI60R199CP C IMOS # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO262 7!"% #

9.9. Size:544K infineon
ipi60r199cp.pdf pdf_icon

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9.10. Size:1214K infineon
ipa60r190c6 ipb60r190c6 ipi60r190c6 ipp60r190c6 ipw60r190c6.pdf pdf_icon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to

9.11. Size:285K infineon
ipi60r099cp rev20 a.pdf pdf_icon

9.12. Size:1432K infineon
ipi60r280c6.pdf pdf_icon

MOSFET + =L9D - PA

9.13. Size:540K infineon
ipi60r520cp.pdf pdf_icon

IPI60R520CP C IMOSTM # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO262

9.14. Size:1368K infineon
ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf pdf_icon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R380C6, IPI60R380C6 IPB60R380C6, IPP60R380C6 IPA60R380C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according

9.15. Size:547K infineon
ipi60r125cp.pdf pdf_icon

IPI60R125CP C IMOSTM # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO220 PG TO2

9.16. Size:556K infineon
ipi60r250cp.pdf pdf_icon

IPI60R250CP C IMOSTM # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound

9.17. Size:556K infineon
ipi60r299cp.pdf pdf_icon

IPI60R299CP C IMOSTM # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO262 7!"%

9.18. Size:1587K infineon
ipa60r280c6 ipb60r280c6 ipi60r280c6 ipp60r280c6 ipw60r280c6.pdf pdf_icon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R280C6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6 IPW60R280C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according

9.19. Size:264K inchange semiconductor
ipi60r380c6.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPI60R380C6 FEATURES With To-262(I2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

9.20. Size:286K inchange semiconductor
ipi60r165cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R165CP FEATURES Static drain-source on-resistance RDS(on) 0.165 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

9.21. Size:264K inchange semiconductor
ipi60r190c6.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPI60R190C6 FEATURES With To-262(I2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

9.22. Size:287K inchange semiconductor
ipi60r099cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R099CP FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

9.23. Size:286K inchange semiconductor
ipi60r600cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R600CP FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

9.24. Size:287K inchange semiconductor
ipi60r385cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R385CP FEATURES Static drain-source on-resistance RDS(on) 0.385 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

9.25. Size:286K inchange semiconductor
ipi60r199cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R199CP FEATURES Static drain-source on-resistance RDS(on) 0.199 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

9.26. Size:286K inchange semiconductor
ipi60r280c6.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R280C6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ABSOLUTE MA

9.27. Size:287K inchange semiconductor
ipi60r520cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R520CP FEATURES Static drain-source on-resistance RDS(on) 0.52 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

9.28. Size:286K inchange semiconductor
ipi60r125cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R125CP FEATURES Static drain-source on-resistance RDS(on) 0.125 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

9.29. Size:287K inchange semiconductor
ipi60r250cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R250CP FEATURES Static drain-source on-resistance RDS(on) 0.25 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

9.30. Size:287K inchange semiconductor
ipi60r299cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R299CP FEATURES Static drain-source on-resistance RDS(on) 0.299 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

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