IPI600N25N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPI600N25N3
Código: 600N25N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 136 W
Tensión drenaje-fuente (Vds): 250 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 25 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 22 nC
Tiempo de elevación (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 112 pF
Resistencia drenaje-fuente RDS(on): 0.06 Ohm
Empaquetado / Estuche: TO-262
Búsqueda de reemplazo de MOSFET IPI600N25N3
IPI600N25N3 Datasheet (PDF)
1.1. ipp600n25n3g ipb600n25n3g ipi600n25n3g.pdf Size:689K _infineon
IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 250 V • N-channel, normal level RDS(on),max 60 mW • Excellent gate charge x R product (FOM) DS(on) ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
5.1. ipi60r380c6.pdf Size:1201K _infineon
MOSFET
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CoolMOSTM Power Transistor
Product Summary
Features
V @ Tj,max 650 V
DS
• Lowest figure-of-merit RON x Qg
R 0.385
Ω
DS(on),max
• Ultra low gate charge
Q 17 nC
g,typ
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO262
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially desig 5.6. ipi60r190c6.pdf MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS C6
600V CoolMOS™ C6 Power Transistor
IPx60R190C6
Data Sheet
Rev. 2.1, 2010-02-09
Final
Industrial & Multimarket
600V CoolMOS™ C6 Power Transistor IPA60R190C6, IPB60R190C6
IPI60R190C6, IPP60R190C6
IPW60R190C6
1 Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according 5.7. ipi60r165cp.pdf IPI60R165CP
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CoolMOSTM Power Transistor
Product Summary
V 600 V
DS
R 0.105
Ω
DS(on),max
Q 60 nC
g,typ
Features
• Worldwide best Rds,on in TO262
• Ultra low gate charge
PG-TO262-3-1
• Extreme dv/dt rated
• High peak current capability
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
CoolMOS CPA is specially designed for:
• DC/DC converters for A 5.9. ipi60r280c6.pdf MOSFET
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CoolMOSTM Power Transistor
Product Summary
Features
V @ Tj,max 650 V
DS
• Worldwide best R in TO220
ds,on
R 0.099
Ω
DS(on),max
• Ultra low gate charge
Q 60 nC
g,typ
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO262-3-1
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially Size:556K _infineon
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