IPI600N25N3 MOSFET: N-Ch, 250V, 25A. Full specification with pinout and replacement list

IPI600N25N3 Spec and Replacement

   Type Designator: IPI600N25N3
   Marking Code: 600N25N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 22 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 112 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO-262

IPI600N25N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IPI600N25N3 Specs

..1. Size:271K inchange semiconductor
ipi600n25n3.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI600N25N3 FEATURES Static drain-source on-resistance RDS(on) 60m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

0.1. Size:689K infineon
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IPI60R099CPA CoolMOSTM Power Transistor Product Summary V 600 V DS R 0.105 DS(on),max Q 60 nC g,typ Features Worldwide best Rds,on in TO262 Ultra low gate charge PG-TO262-3-1 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for DC/DC converters for A... See More ⇒

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according... See More ⇒

9.5. Size:620K infineon
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IPI60R099CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Worldwide best R in TO220 ds,on R 0.099 DS(on),max Ultra low gate charge Q 60 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO262-3-1 Pb-free lead plating; RoHS compliant CoolMOS CP is specially ... See More ⇒

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9.7. Size:317K infineon
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IPI60R385CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Lowest figure-of-merit RON x Qg R 0.385 DS(on),max Ultra low gate charge Q 17 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO262 Pb-free lead plating; RoHS compliant CoolMOS CP is specially desig... See More ⇒

9.8. Size:550K infineon
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IPI60R199CP C IMOS # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO262 7!"% # ... See More ⇒

9.9. Size:544K infineon
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003 6 71 12 45 6 78 9 1 8 8 8 1 8 F OO G H _>D r M(0 ] [ U R , L !#% ' & -$ " &'" #)*+, $ ( ! s>D A , [@ q ^q t i L (0 ./0/ $ ! 10$ ! 0 2 & & u$!8 b v ? L ... See More ⇒

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to ... See More ⇒

9.11. Size:285K infineon
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9.12. Size:1432K infineon
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R380C6, IPI60R380C6 IPB60R380C6, IPP60R380C6 IPA60R380C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according... See More ⇒

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9.16. Size:556K infineon
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IPI60R250CP C IMOSTM # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound ... See More ⇒

9.17. Size:556K infineon
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9.18. Size:1587K infineon
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R280C6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6 IPW60R280C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according... See More ⇒

9.19. Size:264K inchange semiconductor
ipi60r380c6.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPI60R380C6 FEATURES With To-262(I2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒

9.20. Size:286K inchange semiconductor
ipi60r165cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R165CP FEATURES Static drain-source on-resistance RDS(on) 0.165 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒

9.21. Size:264K inchange semiconductor
ipi60r190c6.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPI60R190C6 FEATURES With To-262(I2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒

9.22. Size:287K inchange semiconductor
ipi60r099cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R099CP FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

9.23. Size:286K inchange semiconductor
ipi60r600cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R600CP FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒

9.24. Size:287K inchange semiconductor
ipi60r385cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R385CP FEATURES Static drain-source on-resistance RDS(on) 0.385 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

9.25. Size:286K inchange semiconductor
ipi60r199cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R199CP FEATURES Static drain-source on-resistance RDS(on) 0.199 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

9.26. Size:286K inchange semiconductor
ipi60r280c6.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R280C6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ABSOLUTE MA... See More ⇒

9.27. Size:287K inchange semiconductor
ipi60r520cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R520CP FEATURES Static drain-source on-resistance RDS(on) 0.52 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒

9.28. Size:286K inchange semiconductor
ipi60r125cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R125CP FEATURES Static drain-source on-resistance RDS(on) 0.125 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

9.29. Size:287K inchange semiconductor
ipi60r250cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R250CP FEATURES Static drain-source on-resistance RDS(on) 0.25 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒

9.30. Size:287K inchange semiconductor
ipi60r299cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R299CP FEATURES Static drain-source on-resistance RDS(on) 0.299 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

Detailed specifications: IPI147N12N3 , IPI180N10N3 , IPI200N15N3 , IPI200N25N3 , IPI26CN10N , IPI320N20N3 , IPI35CN10N , IPI530N15N3 , 7N65 , IPI80CN10N , IRFL3713S , IRFP3207Z , IRFP4905 , IRFSL4510 , IRFSL7762 , IRFSL7787 , IRFU430A .