IPI600N25N3 MOSFET. Datasheet pdf. Equivalent

IPI600N25N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IPI600N25N3 Datasheet (PDF)

0.1. ipp600n25n3g ipb600n25n3g ipi600n25n3g.pdf Size:689K _infineon

IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 250 V • N-channel, normal level RDS(on),max 60 mW • Excellent gate charge x R product (FOM) DS(on) ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application �

0.2. ipi600n25n3.pdf Size:271K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPI600N25N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤60mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMB

 9.1. ipi60r380c6.pdf Size:1201K _infineon

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N Final 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJ9.2. ipi60r299cp.pdf Size:556K _infineon

IPI60R299CP CססIMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,H / xQg ON 0.299 DS(on) max U 2 AHF6 ADK <6H: 8=6F<: 22 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 for industrial grade applications 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH; Halogen free mold compound PG‐TO262 ::7!"%

 9.3. ipi60r600cp.pdf Size:541K _infineon

IPI60R600CP CססIMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,H / L . ON g 1j X 0.6 !0 DC B6L U 2 AHF6 ADK <6H: 8=6F<: 21 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 for industrial grade applications 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH; Halogen free mold compound PG‐TO262 :

9.4. ipi60r250cp.pdf Size:556K _infineon

IPI60R250CP CססIMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,H / xQg ON 1? X 0.250 DS(on) max U 2 AHF6 ADK <6H: 8=6F<: 26 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 for industrial grade applications 688DF9>C< HD '"!" PG‐TO262 U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH; Halogen free mold compound ::

 9.5. ipi60r385cp.pdf Size:317K _infineon

IPI60R385CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS • Lowest figure-of-merit RON x Qg R 0.385 Ω DS(on),max • Ultra low gate charge Q 17 nC g,typ • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications PG-TO262 • Pb-free lead plating; RoHS compliant CoolMOS CP is specially desig

9.6. ipi60r190c6.pdf Size:1495K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS™ C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according

9.7. ipi60r165cp.pdf Size:547K _infineon

IPI60R165CP CססIMOS® #:A0< &<,9=4=>:< #<:/?.> %?88,H / xQg ON 0.165 W DS(on) max U 2 AHF6 ADK <6H: 8=6F<: 9 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 for industrial grade applications 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH; Halogen free mold compound PG‐TO262 ::7!"%

9.8. ipi60r099cpa.pdf Size:407K _infineon

IPI60R099CPA CoolMOSTM Power Transistor Product Summary V 600 V DS R 0.105 Ω DS(on),max Q 60 nC g,typ Features • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for A

9.9. ipi60r280c6.pdf Size:1432K _infineon

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJ9.10. ipi60r199cpa.pdf Size:550K _infineon

IPI60R199CP CססIMOS® #:A0< &<,9=4=>:< #<:/?.> %?88,H / xQg ON 0.199 DS(on) max U 2 AHF6 ADK <6H: 8=6F<: nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 for industrial grade applications 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH; Halogen free mold compound PG‐TO262 ::7!"% #

9.11. ipi60r520cp.pdf Size:540K _infineon

IPI60R520CP CססIMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,H / L . ON g 1? X 0.520 !0 DC B6L U 2 AHF6 ADK <6H: 8=6F<: 24 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 for industrial grade applications 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH; Halogen free mold compound PG‐TO262

9.12. ipi60r125cp.pdf Size:547K _infineon

IPI60R125CP CססIMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,H / xQg ON 0.125 DS(on) max U 2 AHF6 ADK <6H: 8=6F<: 5 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 for industrial grade applications 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH; Halogen free mold compound PG‐TO220 PG‐TO2

9.13. ipi60r099cp rev20 a.pdf Size:285K _infineon

IPI60R099CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS • Worldwide best R in TO220 ds,on R 0.099 Ω DS(on),max • Ultra low gate charge Q 60 nC g,typ • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications PG-TO262-3-1 • Pb-free lead plating; RoHS compliant CoolMOS CP is specially

9.14. ipi60r380c6.pdf Size:264K _inchange_semiconductor

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPI60R380C6 ·FEATURES ·With To-262(I2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALU

9.15. ipi60r299cp.pdf Size:287K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPI60R299CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.299Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAM

9.16. ipi60r600cp.pdf Size:286K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPI60R600CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMET

9.17. ipi60r250cp.pdf Size:287K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPI60R250CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.25Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAME

9.18. ipi60r199cp.pdf Size:286K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPI60R199CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.199Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAM

9.19. ipi60r385cp.pdf Size:287K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPI60R385CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.385Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAM

9.20. ipi60r099cp.pdf Size:287K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPI60R099CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAM

9.21. ipi60r190c6.pdf Size:264K _inchange_semiconductor

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPI60R190C6 ·FEATURES ·With To-262(I2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALU

9.22. ipi60r165cp.pdf Size:286K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPI60R165CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.165Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION · Ultra low gate charge · High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PAR

9.23. ipi60r280c6.pdf Size:286K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPI60R280C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ·ABSOLUTE MA

9.24. ipi60r520cp.pdf Size:287K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPI60R520CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.52Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAME

9.25. ipi60r125cp.pdf Size:286K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPI60R125CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.125Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAM

LIST

Last Update

MOSFET: R6007JNX | R6007JNJ | R6007JND3 | R6006KNX | R6006KND3 | R6006JNX | R6006JNJ | R6006JND3 | R6004JNX | R6004JNJ | R6004JND3 | R6003KND3 | R6002END3 | JCS650S | JCS650F | JCS650C