IPI600N25N3 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPI600N25N3
Marking Code: 600N25N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 136 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 25 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 22 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 112 pF
Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm
Package: TO-262
IPI600N25N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPI600N25N3 Datasheet (PDF)
0.1. ipp600n25n3g ipb600n25n3g ipi600n25n3g.pdf Size:689K _infineon
IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 250 V • N-channel, normal level RDS(on),max 60 mW • Excellent gate charge x R product (FOM) DS(on) ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
0.2. ipi600n25n3.pdf Size:271K _inchange_semiconductor
isc N-Channel MOSFET Transistor IPI600N25N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤60mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMB
9.1. ipi60r380c6.pdf Size:1201K _infineon
MOSFET
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CoolMOSTM Power Transistor
Product Summary
Features
V @ Tj,max 650 V
DS
• Lowest figure-of-merit RON x Qg
R 0.385
Ω
DS(on),max
• Ultra low gate charge
Q 17 nC
g,typ
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO262
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially desig 9.6. ipi60r190c6.pdf MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS C6
600V CoolMOS™ C6 Power Transistor
IPx60R190C6
Data Sheet
Rev. 2.1, 2010-02-09
Final
Industrial & Multimarket
600V CoolMOS™ C6 Power Transistor IPA60R190C6, IPB60R190C6
IPI60R190C6, IPP60R190C6
IPW60R190C6
1 Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according 9.7. ipi60r165cp.pdf IPI60R165CP
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CoolMOSTM Power Transistor
Product Summary
V 600 V
DS
R 0.105
Ω
DS(on),max
Q 60 nC
g,typ
Features
• Worldwide best Rds,on in TO262
• Ultra low gate charge
PG-TO262-3-1
• Extreme dv/dt rated
• High peak current capability
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
CoolMOS CPA is specially designed for:
• DC/DC converters for A 9.9. ipi60r280c6.pdf MOSFET
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#<:/?.> %?88, 9.13. ipi60r099cp rev20 a.pdf IPI60R099CP
CoolMOSTM Power Transistor
Product Summary
Features
V @ Tj,max 650 V
DS
• Worldwide best R in TO220
ds,on
R 0.099
Ω
DS(on),max
• Ultra low gate charge
Q 60 nC
g,typ
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO262-3-1
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially 9.14. ipi60r380c6.pdf INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor IPI60R380C6
·FEATURES
·With To-262(I2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALU 9.15. ipi60r299cp.pdf isc N-Channel MOSFET Transistor IPI60R299CP
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.299Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Ultra low gate charge
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAM 9.16. ipi60r600cp.pdf isc N-Channel MOSFET Transistor IPI60R600CP
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.6Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Ultra low gate charge
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMET 9.17. ipi60r250cp.pdf isc N-Channel MOSFET Transistor IPI60R250CP
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.25Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Ultra low gate charge
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAME 9.18. ipi60r199cp.pdf isc N-Channel MOSFET Transistor IPI60R199CP
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.199Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Ultra low gate charge
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAM 9.19. ipi60r385cp.pdf isc N-Channel MOSFET Transistor IPI60R385CP
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.385Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Ultra low gate charge
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAM 9.20. ipi60r099cp.pdf isc N-Channel MOSFET Transistor IPI60R099CP
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.099Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Ultra low gate charge
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAM 9.21. ipi60r190c6.pdf INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor IPI60R190C6
·FEATURES
·With To-262(I2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALU 9.22. ipi60r165cp.pdf isc N-Channel MOSFET Transistor IPI60R165CP
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.165Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
· Ultra low gate charge
· High peak current capability
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PAR 9.23. ipi60r280c6.pdf isc N-Channel MOSFET Transistor IPI60R280C6
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.28Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Provide all benefits of a fast switching super junction MOS while not
sacrificing ease of use
·ABSOLUTE MA 9.24. ipi60r520cp.pdf isc N-Channel MOSFET Transistor IPI60R520CP
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.52Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Ultra low gate charge
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAME 9.25. ipi60r125cp.pdf isc N-Channel MOSFET Transistor IPI60R125CP
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.125Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Ultra low gate charge
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
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Size:287K _inchange_semiconductor
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Size:286K _inchange_semiconductor
Size:287K _inchange_semiconductor
Size:286K _inchange_semiconductor
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .