IRFP4905 Datasheet. Equivalente

 ..1. Size:253K  inchange semiconductor
 irfp4905.pdf

isc P-Channel MOSFET Transistor IRFP4905 FEATURES Drain Current I = -70A@ T =25 D C Drain Source Voltage- V = -55V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.1. Size:284K  1
 irfw450 irfp450 irfp450fi.pdf

 9.2. Size:319K  international rectifier
 irfp4568pbf.pdf

PD -96175 IRFP4568PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS D VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 4.8m l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 5.9m S ID (Silicon Limited) 171 Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness l Fully Characterized Capacit

 9.3. Size:199K  international rectifier
 irfp450npbf.pdf

PD- 95663 SMPS MOSFET IRFP450NPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.37 14A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche

 9.4. Size:101K  international rectifier
 irfp450a.pdf

PD -91884 SMPS MOSFET IRFP450A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.40 14A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current

 9.5. Size:291K  international rectifier
 irfp4321pbf.pdf

PD - 97106 IRFP4321PbF HEXFET Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits 12m RDS(on) typ. Benefits max. 15.5m l Low RDSON Reduces Losses ID 78A l Low Gate Charge Improves the Switching Performance D l Improved Diode Recovery

 9.6. Size:205K  international rectifier
 irfp460lcpbf.pdf

PD - 94902 IRFP460LCPbF Lead-Free 12/19/03 Document Number 91235 www.vishay.com 1 IRFP460LCPbF Document Number 91235 www.vishay.com 2 IRFP460LCPbF Document Number 91235 www.vishay.com 3 IRFP460LCPbF Document Number 91235 www.vishay.com 4 IRFP460LCPbF Document Number 91235 www.vishay.com 5 IRFP460LCPbF Document Number 91235 www.vishay.com 6 IRFP460LCPbF Docu

 9.7. Size:873K  international rectifier
 irfp460.pdf

PD - 94901 IRFP460PbF Lead-Free 12/19/03 Document Number 91237 www.vishay.com 1 IRFP460PbF Document Number 91237 www.vishay.com 2 IRFP460PbF Document Number 91237 www.vishay.com 3 IRFP460PbF Document Number 91237 www.vishay.com 4 IRFP460PbF Document Number 91237 www.vishay.com 5 IRFP460PbF Document Number 91237 www.vishay.com 6 IRFP460PbF TO-247AC Package O

 9.8. Size:275K  international rectifier
 auirfp4004.pdf

PD - 96407A AUTOMOTIVE GRADE AUIRFP4004 HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V D Low On-Resistance RDS(on) typ. 1.35m 175 C Operating Temperature max. 1.70m Fast Switching G ID (Silicon Limited) 350A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 195A S Automotive Qualified * Description D S

 9.9. Size:511K  international rectifier
 irfp4127pbf.pdf

IRFP4127PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS D VDSS 200V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 17m Hard Switched and High Frequency Circuits G 21m max S ID 75A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara

 9.10. Size:154K  international rectifier
 irfp460lc.pdf

PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 500V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.27 Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 20A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

 9.11. Size:864K  international rectifier
 irfp448.pdf

PD - 94899 IRFP448PbF Lead-Free 12/18/03 Document Number 91229 www.vishay.com 1 IRFP448PbF Document Number 91229 www.vishay.com 2 IRFP448PbF Document Number 91229 www.vishay.com 3 IRFP448PbF Document Number 91229 www.vishay.com 4 IRFP448PbF Document Number 91229 www.vishay.com 5 IRFP448PbF Document Number 91229 www.vishay.com 6 IRFP448PbF TO-247AC Package O

 9.12. Size:296K  international rectifier
 irfp4468pbf.pdf

PD -97134 IRFP4468PbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.0m l Uninterruptible Power Supply l High Speed Power Switching max. 2.6m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 290A c ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ru

 9.13. Size:381K  international rectifier
 auirfp4568-e.pdf

AUTOMOTIVE GRADE AUIRFP4568 AUIRFP4568-E Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS 150V l 175 C Operating Temperature RDS(on) typ.4.8m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 5.9m l Lead-Free, RoHS Compliant S ID 171A l Automotive Qualified * D Description D Specif

 9.14. Size:119K  international rectifier
 irfp449.pdf

 9.15. Size:159K  international rectifier
 irfp450lc.pdf

PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.40 Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 14A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

 9.16. Size:295K  international rectifier
 irfp4004pbf.pdf

PD - 97323 IRFP4004PbF Applications l High Efficiency Synchronous Rectification in HEXFET Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 40V l High Speed Power Switching RDS(on) typ. 1.35m l Hard Switched and High Frequency Circuits max. 1.70m G ID (Silicon Limited) 350A c S ID (Package Limited) 195A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Rug

 9.17. Size:206K  international rectifier
 irfp460apbf.pdf

PD- 94853 SMPS MOSFET IRFP460APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.27 20A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanc

 9.18. Size:290K  international rectifier
 irfp4232pbf.pdf

PD - 96965A IRFP4232PbF PDP MOSFET Features Key Parameters l Advanced process technology VDS min 250 V l Key parameters optimized for PDP Sustain & Energy Recovery applications VDS (Avalanche) typ. 300 V l Low EPULSE rating to reduce the power m RDS(ON) typ. @ 10V 30 dissipation in Sustain & ER applications EPULSE typ. 310 J l Low QG for fast response IRP max @ TC= 100 C l

 9.19. Size:290K  international rectifier
 irfp4242pbf.pdf

PD - 96966B IRFP4242PbF PDP MOSFET Features Key Parameters l Advanced process technology VDS min 300 V l Key parameters optimized for PDP Sustain & Energy Recovery applications VDS (Avalanche) typ. 360 V l Low EPULSE rating to reduce the power m RDS(ON) typ. @ 10V 49 dissipation in Sustain & ER applications IRP max @ TC= 100 C 93 A l Low QG for fast response TJ max l High re

 9.20. Size:103K  international rectifier
 irfp4710.pdf

PD - 94361 IRFP4710 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014 72A Motor Control Uninterruptible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-247AC Fully Characterized Avalanche Volta

 9.21. Size:298K  international rectifier
 irfp4332pbf.pdf

PD - 97100B IRFP4332PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy Recovery TJ max 175 C and Pass Switch Applications l Low QG for

 9.22. Size:299K  international rectifier
 irfp4310zpbf.pdf

PD - 97123A IRFP4310ZPbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 134A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

 9.23. Size:115K  international rectifier
 irfp460as.pdf

PD-94011A SMPS MOSFET IRFP460AS HEXFET Power MOSFET Applications SMPS, UPS, Welding and High Speed VDSS Rds(on) max ID Power Switching 500V 0.27 20A Benefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mounting Description Third

 9.24. Size:301K  international rectifier
 irfp4229pbf.pdf

PD - 97079B IRFP4229PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 87 A and Pass Switch Applications

 9.25. Size:373K  international rectifier
 auirfp4409.pdf

AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

 9.26. Size:94K  international rectifier
 irfp460n.pdf

PD-94098 SMPS MOSFET IRFP460N HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.24 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current

 9.27. Size:288K  international rectifier
 irfp4110pbf.pdf

PD - 97311 IRFP4110PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A c ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l

 9.28. Size:300K  international rectifier
 irfp4228pbf.pdf

PD - 97229A IRFP4228PbF PDP SWITCH Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP VDS min 150 V Sustain, Energy Recovery and Pass VDS (Avalanche) typ. 180 V Switch Applications RDS(ON) typ. @ 10V m 12 l Low EPULSE Rating to Reduce Power IRP max @ TC= 100 C 170 A Dissipation in PDP Sustain, Energy TJ max 175 C Recovery and Pass

 9.29. Size:878K  international rectifier
 irfp450pbf.pdf

PD - 94852 IRFP450PbF Lead-Free www.irf.com 1 11/17/03 IRFP450PbF 2 www.irf.com IRFP450PbF www.irf.com 3 IRFP450PbF 4 www.irf.com IRFP450PbF www.irf.com 5 IRFP450PbF 6 www.irf.com IRFP450PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2

 9.30. Size:161K  international rectifier
 irfp460npbf.pdf

PD-94809 SMPS MOSFET IRFP460NPbF HEXFET Power MOSFET Applications Switch Mode Power Supply ( SMPS ) VDSS Rds(on) max ID Uninterruptable Power Supply 500V 0.24 20A High speed power switching Switch Mode Power Supply ( SMPS ) Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Character

 9.31. Size:172K  international rectifier
 irfp460p.pdf

PD-93946A IRFP460P Dynamic dv/dt Rating HEXFET Power MOSFET Repetitive Avalanche Rated D Isolated Central Mounting Hole VDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27 G Solder Plated for Reflowing ID = 20A Description S Third Generation HEXFET s from International Rectifier provide the designer with the best combination of f

 9.32. Size:296K  international rectifier
 irfp4227pbf.pdf

PD - 97070A IRFP4227PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 130 A and Pass Switch Applications

 9.33. Size:178K  international rectifier
 irfp4710pbf.pdf

PD - 95055 IRFP4710PbF HEXFET Power MOSFET AppIications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 0.014 72A l Motor Control l Uninterruptible Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-247AC l Fully Charact

 9.34. Size:876K  international rectifier
 irfp450.pdf

PD - 94852 IRFP450PbF Lead-Free 11/17/03 Document Number 91233 www.vishay.com 1 IRFP450PbF Document Number 91233 www.vishay.com 2 IRFP450PbF Document Number 91233 www.vishay.com 3 IRFP450PbF Document Number 91233 www.vishay.com 4 IRFP450PbF Document Number 91233 www.vishay.com 5 IRFP450PbF Document Number 91233 www.vishay.com 6 IRFP450PbF TO-247AC Package O

 9.35. Size:383K  international rectifier
 irfp4137pbf.pdf

IRFP4137PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS D VDSS 300V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m Hard Switched and High Frequency Circuits G 69m max S ID 38A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara

 9.36. Size:283K  international rectifier
 irfp4410zpbf.pdf

PD - 97309A IRFP4410ZPbF HEXFET Power MOSFET Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 7.2m l High Speed Power Switching max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Cap

 9.37. Size:287K  international rectifier
 irfp4668pbf.pdf

PD -97140 IRFP4668PbF HEXFET Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 8.0m l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 9.7m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D l Fully Characterized Capacitance an

 9.38. Size:303K  international rectifier
 irfp4868pbf.pdf

IRFP4868PbF VDSS 300V D RDS(on) typ. 25.5m max. 32m S ID 70A D G Applications TO-247AC High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching G D S Hard Switched and High Frequency Circuits Gate Drain Source Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fu

 9.39. Size:277K  international rectifier
 irfp4368pbf.pdf

PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in HEXFET Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 1.46m l Hard Switched and High Frequency Circuits max. 1.85m G ID (Silicon Limited) 350Ac S ID (Package Limited) 195A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Rugge

 9.40. Size:925K  international rectifier
 irfp440.pdf

PD - 95198 IRFP440PbF Lead-Free 4/27/04 Document Number 91228 www.vishay.com 1 IRFP440PbF Document Number 91228 www.vishay.com 2 IRFP440PbF Document Number 91228 www.vishay.com 3 IRFP440PbF Document Number 91228 www.vishay.com 4 IRFP440PbF Document Number 91228 www.vishay.com 5 IRFP440PbF Document Number 91228 www.vishay.com 6 IRFP440PbF TO-247AC Package Ou

 9.41. Size:204K  international rectifier
 irfp450r irfp451r irfp452r irfp453r.pdf

 9.42. Size:121K  international rectifier
 irfp450n.pdf

PD- 94216 SMPS MOSFET IRFP450N HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.37 14A l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Cur

 9.43. Size:195K  international rectifier
 irfp450apbf.pdf

PD -95054 SMPS MOSFET IRFP450APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.40 14A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avala

 9.44. Size:95K  international rectifier
 irfp460a.pdf

PD- 91880 SMPS MOSFET IRFP460A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current

 9.45. Size:676K  international rectifier
 auirfp4310z.pdf

AUTOMOTIVE GRADE AUIRFP4310Z Features VDSS 100V Advanced Process Technology RDS(on) typ. 4.8m Ultra Low On-Resistance max. Dynamic dv/dt Rating 6.0m 175 C Operating Temperature ID (Silicon Limited) 128A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Autom

 9.46. Size:329K  international rectifier
 irfp4768pbf.pdf

PD - 97379 IRFP4768PbF HEXFET Power MOSFET D Applications VDSS 250V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 14.5m l High Speed Power Switching G max. 17.5m l Hard Switched and High Frequency Circuits ID 93A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance

 9.47. Size:91K  st
 irfp460.pdf

IRFP460 N - CHANNEL 500V - 0.22 - 20 A - TO-247 PowerMESH MOSFET TYPE VDSS RDS(on) ID IRFP460 500 V

 9.48. Size:489K  st
 irfp450 irfp451 irfp452 irfp453-fi.pdf

 9.49. Size:276K  st
 irfp450.pdf

IRFP450 N-CHANNEL 500V - 0.31 - 14A TO-247 PowerMesh II MOSFET TYPE VDSS RDS(on) ID IRFP450 500V

 9.50. Size:770K  fairchild semi
 irfp460c.pdf

February 2002 IRFP460C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.24 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 130nC) planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to

 9.51. Size:729K  fairchild semi
 irfp450b.pdf

November 2001 IRFP450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 14A, 500V, RDS(on) = 0.39 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 87 nC) planar, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast s

 9.52. Size:698K  njs
 irfp440r irfp441r irfp442r irfp443r.pdf

 9.53. Size:942K  samsung
 irfp450a.pdf

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 0.308 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

 9.54. Size:192K  samsung
 irfp440-443 irf840-843.pdf

 9.55. Size:345K  samsung
 irfp430-433 irf830-833.pdf

 9.56. Size:932K  samsung
 irfp440a.pdf

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 0.638 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

 9.57. Size:159K  vishay
 irfp460 sihfp460.pdf

IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 29 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements D Le

 9.58. Size:129K  vishay
 irfp450n irfp450npbf.pdf

IRFP450N, SiHFP450N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RoHS RDS(on) (Max.) ( )VGS = 10 V 0.37 Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Ruggedness Qg (Max.) (nC) 77 Fully Characterized Capacitance and Qgs (nC) 26 Avalanche Voltage and Current Qgd (nC) 34 Effect

 9.59. Size:1449K  vishay
 irfp440pbf.pdf

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.85 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 63 COMPLIANT Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Lead (Pb

 9.60. Size:1566K  vishay
 irfp450lc sihfp450lc.pdf

IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.40 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 74 Reduced Ciss, Coss, Crss COMPLIANT Qgs (nC) 19 Isolated Central Mounting Hole Qgd (nC) 35 Dynamic dV/dt Rated Configuration

 9.61. Size:158K  vishay
 irfp460n irfp460npbf irfp460n sihfp460n sihfp460n.pdf

IRFP460N, SiHFP460N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 124 COMPLIANT Ruggedness Qgs (nC) 40 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 57 Configura

 9.62. Size:1629K  vishay
 irfp448 sihfp448.pdf

IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.60 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 84 Fast Switching Qgs (nC) 8.4 Ease of Paralleling Qgd (nC) 50 Simple Drive Requirements Configuration Single Compli

 9.63. Size:183K  vishay
 irfp460b sihg460b.pdf

IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.25 - Low Input Capacitance (Ciss) Qg max. (nC) 170 - Reduced Capacitive Switching Losses Qgs (nC) 14 - High Body Diode Ruggedness Qgd (nC) 28 - Avalanche Energy Rate

 9.64. Size:180K  vishay
 irfp460a sihfp460a.pdf

IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.27 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 105 COMPLIANT Ruggedness Qgs (nC) 26 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 42 and Current Configurat

 9.65. Size:1460K  vishay
 irfp440 sihfp440.pdf

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.85 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Complian

 9.66. Size:302K  vishay
 irfp450a sihfp450a.pdf

IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 64 Ruggedness COMPLIANT Qgs (nC) 16 Fully Characterized Capacitance and Qgd (nC) 26 Avalanche Voltage and Current Configu

 9.67. Size:1560K  vishay
 irfp450 sihfp450.pdf

IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 150 COMPLIANT Fast Switching Qgs (nC) 20 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Lead (P

 9.68. Size:1663K  vishay
 irfp448pbf.pdf

IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.60 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 84 Fast Switching Qgs (nC) 8.4 Ease of Paralleling Qgd (nC) 50 Simple Drive Requirements Configuration Single Lead

 9.69. Size:1124K  vishay
 irfp460lc sihfp460lc.pdf

IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.27 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 120 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 32 Isolated Central Mounting Hole Qgd (nC) 49 Dynamic dV/dt Rating Configuratio

 9.70. Size:156K  vishay
 irfp460pbf irfp460 sihfp460.pdf

IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 29 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements D Le

 9.71. Size:1570K  infineon
 irfp450lc sihfp450lc.pdf

IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.40 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 74 Reduced Ciss, Coss, Crss COMPLIANT Qgs (nC) 19 Isolated Central Mounting Hole Qgd (nC) 35 Dynamic dV/dt Rated Configuration

 9.72. Size:1634K  infineon
 irfp448 sihfp448.pdf

IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.60 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 84 Fast Switching Qgs (nC) 8.4 Ease of Paralleling Qgd (nC) 50 Simple Drive Requirements Configuration Single Compli

 9.73. Size:549K  infineon
 auirfp4568.pdf

AUIRFP4568 AUTOMOTIVE GRADE AUIRFP4568-E Features VDSS 150V Advanced Planar Technology RDS(on) typ. 4.8m Ultra Low On-Resistance Dynamic dv/dt Rating max. 5.9m 175 C Operating Temperature ID 171A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description S

 9.74. Size:476K  infineon
 auirfp4409.pdf

AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

 9.75. Size:309K  infineon
 irfp450a sihfp450a.pdf

IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 64 Ruggedness COMPLIANT Qgs (nC) 16 Fully Characterized Capacitance and Qgd (nC) 26 Avalanche Voltage and Current Configu

 9.76. Size:1133K  infineon
 irfp460lc sihfp460lc.pdf

IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.27 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 120 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 32 Isolated Central Mounting Hole Qgd (nC) 49 Dynamic dV/dt Rating Configuratio

 9.77. Size:537K  infineon
 irfp4868pbf.pdf

IRFP4868PbF VDSS 300V D RDS(on) typ. 25.5m max. 32m S ID 70A D G Applications TO-247AC High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching G D S Hard Switched and High Frequency Circuits Gate Drain Source Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 9.78. Size:519K  infineon
 auirfp4110.pdf

AUTOMOTIVE GRADE AUIRFP4110 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V D Ultra Low On-Resistance RDS(on) typ. 3.7m Enhanced dV/dT and dI/dT capability 4.5m max 175 C Operating Temperature G ID (Silicon Limited) 180A Fast Switching S Repetitive Avalanche Allowed up to Tjmax ID (Package Lim

 9.79. Size:77K  ixys
 irfp460.pdf

MegaMOSTM IRFP 460 VDSS = 500 V Power MOSFET ID(cont) = 20 A RDS(on) = 0.27 N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C20 A G = Gate, D = Drain, IDM TC = 25 C, pulse wi

 9.80. Size:47K  ixys
 irfp470.pdf

IRFP 470 VDSS = 500 V MegaMOSTMFET ID (cont) = 24 A RDS(on) = 0.23 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C24 A G = Gate, D = Drain, IDM TC = 25 C, pulse width limited by TJM 96 A

 9.81. Size:46K  ixys
 irfp450.pdf

IRFP 450 VDSS = 500 V Standard Power MOSFET ID(cont) = 14 A RDS(on) = 0.40 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C14 A G = Gate, D = Drain, IDM TC = 25 C, pulse width limited by

 9.82. Size:44K  harris semi
 irfp462.pdf

IRFP460, S E M I C O N D U C T O R IRFP462 20A and 17A, 500V, 0.27 and 0.35 Ohm, January 1998 N-Channel Power MOSFETs Features Description 20A and 17A, 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 0.27 and 0.35 MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in t

 9.83. Size:564K  cn evvo
 irfp4468.pdf

IRFP4468 Thunder High Power Products Silicon N-Channel Power MOSFET FEATURES Static drain-source on-resistance RDS(on) 2.6m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible

 9.84. Size:728K  cn evvo
 irfp4110.pdf

IRFP4110 N-Channel Enhancement Mode MOSFET Electrical Characteristics (TC=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics Drain-Sourtce Breakdown Voltage VGS=0V,ID=250 A 100 --- --- V BVDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 A IDSS Gate-Source Leakage Current IGSS VGS= 20V, VDS=0A --- --- 100 nA On Chara

 9.85. Size:1838K  cn vbsemi
 irfp460pbf.pdf

IRFP460PBF www.VBsemi.tw N-Channel 500V(D-S) Super Junction Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.080 Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 350 Ruggedness Qgs (nC) 85 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 180 and Current

 9.86. Size:794K  cn minos
 irfp460.pdf

Silicon N-Channel Power MOSFET Description IRFP460 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features V =500V, R

 9.87. Size:431K  cn minos
 irfp450.pdf

Silicon N-Channel Power MOSFET Description The IRFP450 uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features V =500V, R

 9.88. Size:213K  inchange semiconductor
 irfp4568pbf.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP4568PBF FEATURES With TO-247packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.89. Size:375K  inchange semiconductor
 irfp460b.pdf

isc N-Channel MOSFET Transistor IRFP460B FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.90. Size:244K  inchange semiconductor
 irfp4468.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4468 IIRFP4468 FEATURES Static drain-source on-resistance RDS(on) 2.6m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterr

 9.91. Size:236K  inchange semiconductor
 irfp453.pdf

isc N-Channel MOSFET Transistor IRFP453 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a

 9.92. Size:236K  inchange semiconductor
 irfp452.pdf

isc N-Channel MOSFET Transistor IRFP452 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a

 9.93. Size:234K  inchange semiconductor
 irfp460.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP460 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a

 9.94. Size:242K  inchange semiconductor
 irfp4332.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4332 IIRFP4332 FEATURES Static drain-source on-resistance RDS(on) 33m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Repetitive Peak Current Capability for Reliable Operation Short fall & Rise Times For Fast Swi

 9.95. Size:243K  inchange semiconductor
 irfp4568.pdf

isc N-Channel MOSFET Transistor IRFP4568 IIRFP4568 FEATURES Static drain-source on-resistance RDS(on) 5.9m Enhancement mode Vth =3.0 to 5.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply

 9.96. Size:212K  inchange semiconductor
 irfp460apbf.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP460APBF FEATURES With TO-247 packaging Uninterruptible power supply High speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

 9.97. Size:243K  inchange semiconductor
 irfp4321.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4321 IIRFP4321 FEATURES Static drain-source on-resistance RDS(on) 15.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Motion Control Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible

 9.98. Size:243K  inchange semiconductor
 irfp4710.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4710 IIRFP4710 FEATURES Static drain-source on-resistance RDS(on) 14m Enhancement mode Vth =3.5 to 5.5 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency DC-DC Converters Uninterruptible Power Suppl

 9.99. Size:242K  inchange semiconductor
 irfp4137.pdf

isc N-Channel MOSFET Transistor IRFP4137 IIRFP4137 FEATURES Static drain-source on-resistance RDS(on) 69m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 300 V

 9.100. Size:244K  inchange semiconductor
 irfp4368.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4368 IIRFP4368 FEATURES Static drain-source on-resistance RDS(on) 1.85m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninter

 9.101. Size:236K  inchange semiconductor
 irfp442r.pdf

isc N-Channel MOSFET Transistor IRFP442R FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.1 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a

 9.102. Size:334K  inchange semiconductor
 irfp470.pdf

isc N-Channel MOSFET Transistor IRFP470 FEATURES With TO-247 packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

 9.103. Size:242K  inchange semiconductor
 irfp4229.pdf

isc N-Channel MOSFET Transistor IRFP4229 IIRFP4229 FEATURES Static drain-source on-resistance RDS(on) 46m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Repetitive Peak Current Capability for Reliable Operation Short fall & Rise Times For Fast Switching ABSOLUTE MAXIM

 9.104. Size:237K  inchange semiconductor
 irfp440a.pdf

isc N-Channel MOSFET Transistor IRFP440A FEATURES Drain Current I = 8.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplie

 9.105. Size:237K  inchange semiconductor
 irfp443r.pdf

isc N-Channel MOSFET Transistor IRFP443R FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.1 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a

 9.106. Size:243K  inchange semiconductor
 irfp4410z.pdf

isc N-Channel MOSFET Transistor IRFP4410Z IIRFP4410Z FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply

 9.107. Size:243K  inchange semiconductor
 irfp4110.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4110 IIRFP4110 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterr

 9.108. Size:236K  inchange semiconductor
 irfp451.pdf

isc N-Channel MOSFET Transistor IRFP451 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a

 9.109. Size:330K  inchange semiconductor
 irfp462.pdf

isc N-Channel MOSFET Transistor IRFP462 FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.35 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.110. Size:243K  inchange semiconductor
 irfp4768.pdf

isc N-Channel MOSFET Transistor IRFP4768 IIRFP4768 FEATURES Static drain-source on-resistance RDS(on) 17.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Swit

 9.111. Size:242K  inchange semiconductor
 irfp4227.pdf

isc N-Channel MOSFET Transistor IRFP4227 IIRFP4227 FEATURES Static drain-source on-resistance RDS(on) 21m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Repetitive Peak Current Capability for Reliable Operation Short fall & Rise Times For Fast Switching ABSOLUTE MAXIM

 9.112. Size:243K  inchange semiconductor
 irfp4668.pdf

isc N-Channel MOSFET Transistor IRFP4668 IIRFP4668 FEATURES Static drain-source on-resistance RDS(on) 9.7m Enhancement mode Vth =3.0 to 5.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply

 9.113. Size:242K  inchange semiconductor
 irfp4868.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4868 IIRFP4868 FEATURES Static drain-source on-resistance RDS(on) 32m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Dr

 9.114. Size:236K  inchange semiconductor
 irfp441r.pdf

isc N-Channel MOSFET Transistor IRFP441R FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies

 9.115. Size:212K  inchange semiconductor
 irfp4227pbf.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP4227PBF FEATURES With TO-247 packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.116. Size:242K  inchange semiconductor
 irfp4127.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4127 IIRFP4127 FEATURES Static drain-source on-resistance RDS(on) 21m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power

 9.117. Size:213K  inchange semiconductor
 irfp450.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP450 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in swit

 9.118. Size:244K  inchange semiconductor
 irfp4310z.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4310Z IIRFP4310Z FEATURES Static drain-source on-resistance RDS(on) 6.0m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Unin

 9.119. Size:242K  inchange semiconductor
 irfp4004.pdf

isc N-Channel MOSFET Transistor IRFP4004 IIRFP4004 FEATURES Static drain-source on-resistance RDS(on) 1.7m Enhancement mode Vth =2.0 to 4.0V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply H

 9.120. Size:236K  inchange semiconductor
 irfp450r.pdf

isc N-Channel MOSFET Transistor IRFP450R FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies

 9.121. Size:236K  inchange semiconductor
 irfp440r.pdf

isc N-Channel MOSFET Transistor IRFP440R FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies