All MOSFET. IRFP4905 Datasheet

 

IRFP4905 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP4905

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 170 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 70 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: TO-220

IRFP4905 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP4905 Datasheet (PDF)

0.1. irfp4905.pdf Size:253K _inchange_semiconductor

IRFP4905
IRFP4905

isc P-Channel MOSFET Transistor IRFP4905 FEATURES ·Drain Current –I = -70A@ T =25℃ D C ·Drain Source Voltage- : V = -55V(Min) DSS ·Static Drain-Source On-Resistance : R = 20mΩ(Max) DS(on) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purp

9.1. irfp460.pdf Size:91K _st

IRFP4905
IRFP4905

IRFP460  N - CHANNEL 500V - 0.22 Ω - 20 A - TO-247 PowerMESH MOSFET TYPE VDSS RDS(on) ID IRFP460 500 V < 0.27 Ω 20 A TYPICAL R = 0.22 Ω DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 2 This power MOSFET is designed using the 1 company’s consolidated strip layout-based MESH TO-24

9.2. irfp450 irfp451 irfp452 irfp453-fi.pdf Size:489K _st

IRFP4905
IRFP4905



 9.3. irfp450.pdf Size:276K _st

IRFP4905
IRFP4905

IRFP450 N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID IRFP450 500V < 0.38Ω 14 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 2 1 TO-247 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements

9.4. irfp450b.pdf Size:729K _fairchild_semi

IRFP4905
IRFP4905

November 2001 IRFP450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 14A, 500V, RDS(on) = 0.39Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 87 nC) planar, DMOS technology. • Low Crss ( typical 60 pF) This advanced technology has been especially tailored to • Fast s

 9.5. irfp460c.pdf Size:770K _fairchild_semi

IRFP4905
IRFP4905

February 2002 IRFP460C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 20A, 500V, RDS(on) = 0.24Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 130nC) planar stripe, DMOS technology. • Low Crss ( typical 60 pF) This advanced technology has been especially tailored to •

9.6. irfp4410zpbf.pdf Size:283K _international_rectifier

IRFP4905
IRFP4905

PD - 97309A IRFP4410ZPbF HEXFET® Power MOSFET Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 7.2m: l High Speed Power Switching max. 9.0m : l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Cap

9.7. irfp450r irfp451r irfp452r irfp453r.pdf Size:204K _international_rectifier

IRFP4905
IRFP4905



9.8. irfp4868pbf.pdf Size:303K _international_rectifier

IRFP4905
IRFP4905

IRFP4868PbF VDSS 300V D RDS(on) typ. 25.5m max. 32m S ID 70A D G Applications TO-247AC  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply  High Speed Power Switching G D S  Hard Switched and High Frequency Circuits Gate Drain Source Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fu

9.9. irfp450pbf.pdf Size:878K _international_rectifier

IRFP4905
IRFP4905

PD - 94852 IRFP450PbF • Lead-Free www.irf.com 1 11/17/03 IRFP450PbF 2 www.irf.com IRFP450PbF www.irf.com 3 IRFP450PbF 4 www.irf.com IRFP450PbF www.irf.com 5 IRFP450PbF 6 www.irf.com IRFP450PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2

9.10. irfp460n.pdf Size:94K _international_rectifier

IRFP4905
IRFP4905

PD-94098 SMPS MOSFET IRFP460N HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.24Ω 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current

9.11. irfp450lc.pdf Size:159K _international_rectifier

IRFP4905
IRFP4905

PD - 9.1231 IRFP450LC HEXFET® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.40Ω Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 14A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

9.12. irfp4110pbf.pdf Size:288K _international_rectifier

IRFP4905
IRFP4905

PD - 97311 IRFP4110PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m: l Hard Switched and High Frequency Circuits max. 4.5m: ID (Silicon Limited) 180A c ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l

9.13. irfp4768pbf.pdf Size:329K _international_rectifier

IRFP4905
IRFP4905

PD - 97379 IRFP4768PbF HEXFET® Power MOSFET D Applications VDSS 250V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 14.5m Ω l High Speed Power Switching G max. 17.5m Ω l Hard Switched and High Frequency Circuits ID 93A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance

9.14. irfp4127pbf.pdf Size:511K _international_rectifier

IRFP4905
IRFP4905

IRFP4127PbF HEXFET® Power MOSFET Application  High Efficiency Synchronous Rectification in SMPS D VDSS 200V  Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 17m  Hard Switched and High Frequency Circuits G 21m max S ID 75A Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Chara

9.15. irfp460.pdf Size:873K _international_rectifier

IRFP4905
IRFP4905

PD - 94901 IRFP460PbF • Lead-Free 12/19/03 Document Number: 91237 www.vishay.com 1 IRFP460PbF Document Number: 91237 www.vishay.com 2 IRFP460PbF Document Number: 91237 www.vishay.com 3 IRFP460PbF Document Number: 91237 www.vishay.com 4 IRFP460PbF Document Number: 91237 www.vishay.com 5 IRFP460PbF Document Number: 91237 www.vishay.com 6 IRFP460PbF TO-247AC Package O

9.16. irfp4710pbf.pdf Size:178K _international_rectifier

IRFP4905
IRFP4905

PD - 95055 IRFP4710PbF HEXFET® Power MOSFET AppIications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 0.014Ω 72A l Motor Control l Uninterruptible Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-247AC l Fully Charact

9.17. irfp460p.pdf Size:154K _international_rectifier

IRFP4905
IRFP4905

PD-93946A IRFP460P Dynamic dv/dt Rating HEXFET® Power MOSFET Repetitive Avalanche Rated D Isolated Central Mounting Hole VDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27Ω G Solder Plated for Reflowing ID = 20A Description S Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of f

9.18. irfp460as.pdf Size:115K _international_rectifier

IRFP4905
IRFP4905

PD-94011A SMPS MOSFET IRFP460AS HEXFET® Power MOSFET Applications SMPS, UPS, Welding and High Speed VDSS Rds(on) max ID Power Switching 500V 0.27Ω 20A Benefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mounting Description Third

9.19. irfp4242pbf.pdf Size:290K _international_rectifier

IRFP4905
IRFP4905

PD - 96966B IRFP4242PbF PDP MOSFET Features Key Parameters l Advanced process technology VDS min 300 V l Key parameters optimized for PDP Sustain & Energy Recovery applications VDS (Avalanche) typ. 360 V l Low EPULSE rating to reduce the power m RDS(ON) typ. @ 10V 49 dissipation in Sustain & ER applications IRP max @ TC= 100°C 93 A l Low QG for fast response TJ max l High re

9.20. auirfp4568-e.pdf Size:381K _international_rectifier

IRFP4905
IRFP4905

AUTOMOTIVE GRADE AUIRFP4568 AUIRFP4568-E Features HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS 150V l 175°C Operating Temperature RDS(on) typ.4.8mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 5.9mΩ l Lead-Free, RoHS Compliant S ID 171A l Automotive Qualified * D Description D Specif

9.21. irfp4468pbf.pdf Size:296K _international_rectifier

IRFP4905
IRFP4905

PD -97134 IRFP4468PbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.0m : l Uninterruptible Power Supply l High Speed Power Switching max. 2.6m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 290A c ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ru

9.22. irfp4668pbf.pdf Size:287K _international_rectifier

IRFP4905
IRFP4905

PD -97140 IRFP4668PbF HEXFET® Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 8.0m : l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 9.7m : ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D l Fully Characterized Capacitance an

9.23. irfp4710.pdf Size:103K _international_rectifier

IRFP4905
IRFP4905

PD - 94361 IRFP4710 HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014Ω 72A Motor Control Uninterruptible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-247AC Fully Characterized Avalanche Volta

9.24. irfp4232pbf.pdf Size:290K _international_rectifier

IRFP4905
IRFP4905

PD - 96965A IRFP4232PbF PDP MOSFET Features Key Parameters l Advanced process technology VDS min 250 V l Key parameters optimized for PDP Sustain & Energy Recovery applications VDS (Avalanche) typ. 300 V l Low EPULSE rating to reduce the power m RDS(ON) typ. @ 10V 30 dissipation in Sustain & ER applications EPULSE typ. 310 µJ l Low QG for fast response IRP max @ TC= 100°C l

9.25. irfp4004pbf.pdf Size:295K _international_rectifier

IRFP4905
IRFP4905

PD - 97323 IRFP4004PbF Applications l High Efficiency Synchronous Rectification in HEXFET® Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 40V l High Speed Power Switching RDS(on) typ. 1.35mΩ l Hard Switched and High Frequency Circuits max. 1.70mΩ G ID (Silicon Limited) 350A c S ID (Package Limited) 195A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Rug

9.26. irfp460apbf.pdf Size:206K _international_rectifier

IRFP4905
IRFP4905

PD- 94853 SMPS MOSFET IRFP460APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.27Ω 20A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanc

9.27. irfp450n.pdf Size:121K _international_rectifier

IRFP4905
IRFP4905

PD- 94216 SMPS MOSFET IRFP450N HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.37Ω 14A l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Cur

9.28. irfp4137pbf.pdf Size:380K _international_rectifier

IRFP4905
IRFP4905

IRFP4137PbF HEXFET® Power MOSFET Application  High Efficiency Synchronous Rectification in SMPS D VDSS 300V  Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m  Hard Switched and High Frequency Circuits G 69m max S ID 38A Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Chara

9.29. irfp450a.pdf Size:101K _international_rectifier

IRFP4905
IRFP4905

PD -91884 SMPS MOSFET IRFP450A HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.40Ω 14A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current

9.30. irfp4227pbf.pdf Size:296K _international_rectifier

IRFP4905
IRFP4905

PD - 97070A IRFP4227PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 130 A and Pass Switch Applications

9.31. irfp449.pdf Size:119K _international_rectifier

IRFP4905



9.32. auirfp4409.pdf Size:373K _international_rectifier

IRFP4905
IRFP4905

AUTOMOTIVE GRADE AUIRFP4409 HEXFET® Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175°C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

9.33. irfp4321pbf.pdf Size:291K _international_rectifier

IRFP4905
IRFP4905

PD - 97106 IRFP4321PbF HEXFET® Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits 12m: RDS(on) typ. Benefits max. 15.5m: l Low RDSON Reduces Losses ID 78A l Low Gate Charge Improves the Switching Performance D l Improved Diode Recovery

9.34. irfp450apbf.pdf Size:195K _international_rectifier

IRFP4905
IRFP4905

PD -95054 SMPS MOSFET IRFP450APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.40Ω 14A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avala

9.35. irfp4228pbf.pdf Size:300K _international_rectifier

IRFP4905
IRFP4905

PD - 97229A IRFP4228PbF PDP SWITCH Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP VDS min 150 V Sustain, Energy Recovery and Pass VDS (Avalanche) typ. 180 V Switch Applications RDS(ON) typ. @ 10V m 12 l Low EPULSE Rating to Reduce Power IRP max @ TC= 100°C 170 A Dissipation in PDP Sustain, Energy TJ max 175 °C Recovery and Pass

9.36. irfp4310zpbf.pdf Size:299K _international_rectifier

IRFP4905
IRFP4905

PD - 97123A IRFP4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 134A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

9.37. irfp440.pdf Size:925K _international_rectifier

IRFP4905
IRFP4905

PD - 95198 IRFP440PbF • Lead-Free 4/27/04 Document Number: 91228 www.vishay.com 1 IRFP440PbF Document Number: 91228 www.vishay.com 2 IRFP440PbF Document Number: 91228 www.vishay.com 3 IRFP440PbF Document Number: 91228 www.vishay.com 4 IRFP440PbF Document Number: 91228 www.vishay.com 5 IRFP440PbF Document Number: 91228 www.vishay.com 6 IRFP440PbF TO-247AC Package Ou

9.38. irfp4568pbf.pdf Size:319K _international_rectifier

IRFP4905
IRFP4905

PD -96175 IRFP4568PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS D VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 4.8m l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 5.9m S ID (Silicon Limited) 171 Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness l Fully Characterized Capacit

9.39. irfp450.pdf Size:876K _international_rectifier

IRFP4905
IRFP4905

PD - 94852 IRFP450PbF • Lead-Free 11/17/03 Document Number: 91233 www.vishay.com 1 IRFP450PbF Document Number: 91233 www.vishay.com 2 IRFP450PbF Document Number: 91233 www.vishay.com 3 IRFP450PbF Document Number: 91233 www.vishay.com 4 IRFP450PbF Document Number: 91233 www.vishay.com 5 IRFP450PbF Document Number: 91233 www.vishay.com 6 IRFP450PbF TO-247AC Package O

9.40. irfp4332pbf.pdf Size:298K _international_rectifier

IRFP4905
IRFP4905

PD - 97100B IRFP4332PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy Recovery TJ max 175 °C and Pass Switch Applications l Low QG for

9.41. irfp460lc.pdf Size:154K _international_rectifier

IRFP4905
IRFP4905

PD - 9.1232 IRFP460LC HEXFET® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 500V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.27Ω Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 20A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

9.42. irfp460a.pdf Size:95K _international_rectifier

IRFP4905
IRFP4905

PD- 91880 SMPS MOSFET IRFP460A HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27Ω 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current

9.43. irfp4229pbf.pdf Size:301K _international_rectifier

IRFP4905
IRFP4905

PD - 97079B IRFP4229PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 87 A and Pass Switch Applications

9.44. irfp460lcpbf.pdf Size:205K _international_rectifier

IRFP4905
IRFP4905

PD - 94902 IRFP460LCPbF • Lead-Free 12/19/03 Document Number: 91235 www.vishay.com 1 IRFP460LCPbF Document Number: 91235 www.vishay.com 2 IRFP460LCPbF Document Number: 91235 www.vishay.com 3 IRFP460LCPbF Document Number: 91235 www.vishay.com 4 IRFP460LCPbF Document Number: 91235 www.vishay.com 5 IRFP460LCPbF Document Number: 91235 www.vishay.com 6 IRFP460LCPbF Docu

9.45. irfp448.pdf Size:864K _international_rectifier

IRFP4905
IRFP4905

PD - 94899 IRFP448PbF • Lead-Free 12/18/03 Document Number: 91229 www.vishay.com 1 IRFP448PbF Document Number: 91229 www.vishay.com 2 IRFP448PbF Document Number: 91229 www.vishay.com 3 IRFP448PbF Document Number: 91229 www.vishay.com 4 IRFP448PbF Document Number: 91229 www.vishay.com 5 IRFP448PbF Document Number: 91229 www.vishay.com 6 IRFP448PbF TO-247AC Package O

9.46. irfp4368pbf.pdf Size:277K _international_rectifier

IRFP4905
IRFP4905

PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in HEXFET® Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 1.46mΩ l Hard Switched and High Frequency Circuits max. 1.85mΩ G ID (Silicon Limited) 350Ac S ID (Package Limited) 195A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Rugge

9.47. irfp460npbf.pdf Size:161K _international_rectifier

IRFP4905
IRFP4905

PD-94809 SMPS MOSFET IRFP460NPbF HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) VDSS Rds(on) max ID Uninterruptable Power Supply 500V 0.24Ω 20A High speed power switching Switch Mode Power Supply ( SMPS ) Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Character

9.48. irfp450npbf.pdf Size:199K _international_rectifier

IRFP4905
IRFP4905

PD- 95663 SMPS MOSFET IRFP450NPbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.37Ω 14A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche

9.49. irfp440r irfp441r irfp442r irfp443r.pdf Size:698K _njs

IRFP4905
IRFP4905



9.50. irfp440a.pdf Size:932K _samsung

IRFP4905
IRFP4905

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

9.51. irfp450a.pdf Size:942K _samsung

IRFP4905
IRFP4905

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 0.308 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

9.52. irfp430-433 irf830-833.pdf Size:345K _samsung

IRFP4905
IRFP4905



9.53. irfp440-443 irf840-843.pdf Size:192K _samsung

IRFP4905
IRFP4905



9.54. irfp450a sihfp450a.pdf Size:302K _vishay

IRFP4905
IRFP4905

IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (Ω)VGS = 10 V 0.40 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 64 Ruggedness COMPLIANT Qgs (nC) 16 • Fully Characterized Capacitance and Qgd (nC) 26 Avalanche Voltage and Current Configu

9.55. irfp460lc sihfp460lc.pdf Size:1124K _vishay

IRFP4905
IRFP4905

IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 500 • Reduced Gate Drive Requirement Available RDS(on) (Ω)VGS = 10 V 0.27 • Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 120 COMPLIANT • Reduced Ciss, Coss, Crss Qgs (nC) 32 • Isolated Central Mounting Hole Qgd (nC) 49 • Dynamic dV/dt Rating Configuratio

9.56. irfp450n irfp450npbf.pdf Size:129K _vishay

IRFP4905
IRFP4905

IRFP450N, SiHFP450N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RoHS RDS(on) (Max.) (Ω)VGS = 10 V 0.37 • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Ruggedness Qg (Max.) (nC) 77 • Fully Characterized Capacitance and Qgs (nC) 26 Avalanche Voltage and Current Qgd (nC) 34 • Effect

9.57. irfp440pbf.pdf Size:1449K _vishay

IRFP4905
IRFP4905

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 • Repetitive Avalanche Rated Available RDS(on) (Ω)VGS = 10 V 0.85 • Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 63 COMPLIANT • Fast Switching Qgs (nC) 11 • Ease of Paralleling Qgd (nC) 30 • Simple Drive Requirements Configuration Single • Lead (Pb

9.58. irfp460b sihg460b.pdf Size:183K _vishay

IRFP4905
IRFP4905

IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.25 - Low Input Capacitance (Ciss) Qg max. (nC) 170 - Reduced Capacitive Switching Losses Qgs (nC) 14 - High Body Diode Ruggedness Qgd (nC) 28 - Avalanche Energy Rate

9.59. irfp460a sihfp460a.pdf Size:180K _vishay

IRFP4905
IRFP4905

IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (Ω)VGS = 10 V 0.27 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 105 COMPLIANT Ruggedness Qgs (nC) 26 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 42 and Current Configurat

9.60. irfp450lc sihfp450lc.pdf Size:1566K _vishay

IRFP4905
IRFP4905

IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 500 • Reduced Gate Drive Requirement Available RDS(on) (Ω)VGS = 10 V 0.40 • Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 74 • Reduced Ciss, Coss, Crss COMPLIANT Qgs (nC) 19 • Isolated Central Mounting Hole Qgd (nC) 35 • Dynamic dV/dt Rated Configuration

9.61. irfp460n irfp460npbf irfp460n sihfp460n sihfp460n.pdf Size:158K _vishay

IRFP4905
IRFP4905

IRFP460N, SiHFP460N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (Ω)VGS = 10 V 0.24 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 124 COMPLIANT Ruggedness Qgs (nC) 40 • Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 57 Configura

9.62. irfp460pbf irfp460 sihfp460.pdf Size:156K _vishay

IRFP4905
IRFP4905

IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.27 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT • Fast Switching Qgs (nC) 29 Qgd (nC) 110 • Ease of Paralleling Configuration Single • Simple Drive Requirements D • Le

9.63. irfp448 sihfp448.pdf Size:1629K _vishay

IRFP4905
IRFP4905

IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.60 RoHS* • Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 84 • Fast Switching Qgs (nC) 8.4 • Ease of Paralleling Qgd (nC) 50 • Simple Drive Requirements Configuration Single • Compli

9.64. irfp450 sihfp450.pdf Size:1560K _vishay

IRFP4905
IRFP4905

IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 • Repetitive Avalanche Rated Available RDS(on) (Ω)VGS = 10 V 0.40 • Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 150 COMPLIANT • Fast Switching Qgs (nC) 20 • Ease of Paralleling Qgd (nC) 80 • Simple Drive Requirements Configuration Single • Lead (P

9.65. irfp440 sihfp440.pdf Size:1460K _vishay

IRFP4905
IRFP4905

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.85 RoHS* • Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 11 • Ease of Paralleling Qgd (nC) 30 • Simple Drive Requirements Configuration Single • Complian

9.66. irfp448pbf.pdf Size:1663K _vishay

IRFP4905
IRFP4905

IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.60 RoHS* • Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 84 • Fast Switching Qgs (nC) 8.4 • Ease of Paralleling Qgd (nC) 50 • Simple Drive Requirements Configuration Single • Lead

9.67. irfp460.pdf Size:77K _ixys

IRFP4905
IRFP4905

MegaMOSTM IRFP 460 VDSS = 500 V Power MOSFET ID(cont) = 20 A Ω RDS(on) = 0.27Ω Ω Ω Ω N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C20 A G = Gate, D = Drain, IDM TC = 25°C, pulse wi

9.68. irfp470.pdf Size:47K _ixys

IRFP4905
IRFP4905

IRFP 470 VDSS = 500 V MegaMOSTMFET ID (cont) = 24 A Ω RDS(on) = 0.23 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C24 A G = Gate, D = Drain, IDM TC = 25°C, pulse width limited by TJM 96 A

9.69. irfp450.pdf Size:46K _ixys

IRFP4905
IRFP4905

IRFP 450 VDSS = 500 V Standard Power MOSFET ID(cont) = 14 A Ω RDS(on) = 0.40 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C14 A G = Gate, D = Drain, IDM TC = 25°C, pulse width limited by

9.70. irfp462.pdf Size:44K _harris_semi

IRFP4905
IRFP4905

IRFP460, S E M I C O N D U C T O R IRFP462 20A and 17A, 500V, 0.27 and 0.35 Ohm, January 1998 N-Channel Power MOSFETs Features Description • 20A and 17A, 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power • rDS(ON) = 0.27Ω and 0.35Ω MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in t

9.71. irfp442r.pdf Size:236K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP442R FEATURES ·Drain Current –I = 7A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Static Drain-Source On-Resistance : R = 1.1Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies a

9.72. irfp4004.pdf Size:242K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP4004,IIRFP4004 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.7mΩ ·Enhancement mode: Vth =2.0 to 4.0V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·H

9.73. irfp4768.pdf Size:243K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP4768,IIRFP4768 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤17.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Swit

9.74. irfp441r.pdf Size:236K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP441R FEATURES ·Drain Current –I = 8A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.85Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies

9.75. irfp4568.pdf Size:243K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP4568,IIRFP4568 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.9mΩ ·Enhancement mode: Vth =3.0 to 5.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·

9.76. irfp4310z.pdf Size:244K _inchange_semiconductor

IRFP4905
IRFP4905

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4310Z, IIRFP4310Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.0mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Unin

9.77. irfp460.pdf Size:234K _inchange_semiconductor

IRFP4905
IRFP4905

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP460 FEATURES ·Drain Current –I = 20A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.27Ω(Max) DS(on) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies a

9.78. irfp4468.pdf Size:244K _inchange_semiconductor

IRFP4905
IRFP4905

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4468,IIRFP4468 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.6mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterr

9.79. irfp440a.pdf Size:237K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP440A FEATURES ·Drain Current –I = 8.5A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.85Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplie

9.80. irfp4410z.pdf Size:243K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP4410Z, IIRFP4410Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.0mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply

9.81. irfp4710.pdf Size:243K _inchange_semiconductor

IRFP4905
IRFP4905

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4710,IIRFP4710 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤14mΩ ·Enhancement mode: Vth =3.5 to 5.5 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency DC-DC Converters ·Uninterruptible Power Suppl

9.82. irfp4868.pdf Size:242K _inchange_semiconductor

IRFP4905
IRFP4905

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4868,IIRFP4868 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤32mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Dr

9.83. irfp460apbf.pdf Size:212K _inchange_semiconductor

IRFP4905
IRFP4905

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP460APBF ·FEATURES ·With TO-247 packaging ·Uninterruptible power supply ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-So

9.84. irfp443r.pdf Size:237K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP443R FEATURES ·Drain Current –I = 7A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Static Drain-Source On-Resistance : R = 1.1Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies a

9.85. irfp451.pdf Size:236K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP451 FEATURES ·Drain Current –I = 13A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.4Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies a

9.86. irfp4227pbf.pdf Size:212K _inchange_semiconductor

IRFP4905
IRFP4905

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP4227PBF ·FEATURES ·With TO-247 packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃)

9.87. irfp4137.pdf Size:242K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP4137,IIRFP4137 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤69mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 300 V

9.88. irfp450r.pdf Size:236K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP450R FEATURES ·Drain Current –I = 14A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.4Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies

9.89. irfp4227.pdf Size:242K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP4227,IIRFP4227 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤21mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Repetitive Peak Current Capability for Reliable Operation ·Short fall & Rise Times For Fast Switching ·ABSOLUTE MAXIM

9.90. irfp4668.pdf Size:243K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP4668,IIRFP4668 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.7mΩ ·Enhancement mode: Vth =3.0 to 5.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·

9.91. irfp452.pdf Size:236K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP452 FEATURES ·Drain Current –I = 12A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.5Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies a

9.92. irfp453.pdf Size:236K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP453 FEATURES ·Drain Current –I = 12A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.5Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies a

9.93. irfp4368.pdf Size:244K _inchange_semiconductor

IRFP4905
IRFP4905

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4368,IIRFP4368 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.85mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninter

9.94. irfp470.pdf Size:334K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP470 ·FEATURES ·With TO-247 packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

9.95. irfp4127.pdf Size:242K _inchange_semiconductor

IRFP4905
IRFP4905

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4127,IIRFP4127 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤21mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power

9.96. irfp4229.pdf Size:242K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP4229,IIRFP4229 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤46mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Repetitive Peak Current Capability for Reliable Operation ·Short fall & Rise Times For Fast Switching ·ABSOLUTE MAXIM

9.97. irfp4568pbf.pdf Size:213K _inchange_semiconductor

IRFP4905
IRFP4905

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP4568PBF ·FEATURES ·With TO-247packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃)

9.98. irfp450.pdf Size:213K _inchange_semiconductor

IRFP4905
IRFP4905

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP450 FEATURES ·Drain Current –I = 14A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.4Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in swit

9.99. irfp4321.pdf Size:243K _inchange_semiconductor

IRFP4905
IRFP4905

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4321,IIRFP4321 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤15.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Motion Control Applications ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible

9.100. irfp440r.pdf Size:236K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP440R FEATURES ·Drain Current –I = 8A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.85Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies

9.101. irfp4332.pdf Size:242K _inchange_semiconductor

IRFP4905
IRFP4905

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4332,IIRFP4332 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤33mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Repetitive Peak Current Capability for Reliable Operation ·Short fall & Rise Times For Fast Swi

9.102. irfp4110.pdf Size:243K _inchange_semiconductor

IRFP4905
IRFP4905

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4110,IIRFP4110 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.5mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterr

9.103. irfp460b.pdf Size:375K _inchange_semiconductor

IRFP4905
IRFP4905

isc N-Channel MOSFET Transistor IRFP460B FEATURES ·Drain Current –I =20A@ T =25℃ D C ·Drain Source Voltage- : V =500V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.25Ω(Max) DS(on) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpos

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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