FQP20N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQP20N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 417 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 61 nC
Tiempo de subida (tr): 125 nS
Conductancia de drenaje-sustrato (Cd): 273 pF
Resistencia entre drenaje y fuente RDS(on): 0.37 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET FQP20N60
FQP20N60 Datasheet (PDF)
fqpf20n60 fqp20n60.pdf
FQP20N60/FQPF20N60600V,20A N-Channel MOSFETGeneral Description Product SummaryVDS700V@150The FQP20N60 & FQPF20N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 20Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
fqp20n06tstu.pdf
May 2001TMQFETFQP20N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 20A, 60V, RDS(on) = 0.06 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11.5 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored to
fqp20n06l.pdf
May 2001TMQFETFQP20N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21A, 60V, RDS(on) = 0.055 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tail
fqp20n06.pdf
May 2001TMQFETFQP20N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 20A, 60V, RDS(on) = 0.06 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11.5 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored to
fqp20n06l.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqp20n06.pdf
May 2001TMQFETFQP20N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 20A, 60V, RDS(on) = 0.06 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11.5 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored to
fqp20n06l.pdf
FQP20N06Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di
fqp20n06l.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FQP20N06LDESCRIPTIONDrain Current I =21A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 55m(Max)DS(on)100% Avalanche TestedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current , high speed switchingSwi
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FQP12N65C
