FQP20N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQP20N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 417 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 125 nS
Cossⓘ - Capacitancia de salida: 273 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.37 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de FQP20N60 MOSFET
FQP20N60 Datasheet (PDF)
fqpf20n60 fqp20n60.pdf

FQP20N60/FQPF20N60600V,20A N-Channel MOSFETGeneral Description Product SummaryVDS700V@150The FQP20N60 & FQPF20N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 20Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
fqp20n06tstu.pdf

May 2001TMQFETFQP20N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 20A, 60V, RDS(on) = 0.06 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11.5 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored to
fqp20n06l.pdf

May 2001TMQFETFQP20N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21A, 60V, RDS(on) = 0.055 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tail
fqp20n06.pdf

May 2001TMQFETFQP20N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 20A, 60V, RDS(on) = 0.06 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11.5 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored to
Otros transistores... SVF5N60MJ , TSP5N60M , TSF5N60M , AO6414 , MC6414 , CMP40P03 , CSD40N70 , FQPF20N60 , 20N50 , FTD06N03NA , GPT18N50GN3P , GPT18N50GN247 , GPT18N50DGN220FP , HY1001P , HY3610P , ISA07N65A , JCS13N50FT .
History: WMN15N65C2
History: WMN15N65C2



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