FQP20N60 PDF and Equivalents Search

 

FQP20N60 Specs and Replacement

Type Designator: FQP20N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 417 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 125 nS

Cossⓘ - Output Capacitance: 273 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm

Package: TO220

FQP20N60 substitution

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FQP20N60 datasheet

 ..1. Size:450K  1
fqpf20n60 fqp20n60.pdf pdf_icon

FQP20N60

FQP20N60/FQPF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150 The FQP20N60 & FQPF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:654K  fairchild semi
fqp20n06tstu.pdf pdf_icon

FQP20N60

May 2001 TM QFET FQP20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 60V, RDS(on) = 0.06 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to... See More ⇒

 8.2. Size:673K  fairchild semi
fqp20n06l.pdf pdf_icon

FQP20N60

May 2001 TM QFET FQP20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 21A, 60V, RDS(on) = 0.055 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tail... See More ⇒

 8.3. Size:655K  fairchild semi
fqp20n06.pdf pdf_icon

FQP20N60

May 2001 TM QFET FQP20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 60V, RDS(on) = 0.06 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to... See More ⇒

Detailed specifications: SVF5N60MJ, TSP5N60M, TSF5N60M, AO6414, MC6414, CMP40P03, CSD40N70, FQPF20N60, STP80NF70, FTD06N03NA, GPT18N50GN3P, GPT18N50GN247, GPT18N50DGN220FP, HY1001P, HY3610P, ISA07N65A, JCS13N50FT

Keywords - FQP20N60 MOSFET specs

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