KIA50N06 Todos los transistores

KIA50N06 Pb KIA50N06 Pb Free Plating Product 50A,60V Heatsink Planar N-Channel Power MOSFET Features 2. Drain 50A, 60V, RDS(on) = 0.022 @VGS = 10 V BVDSS = 60V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF) RDS(ON) = 0.022 ohm Fast switching 1. Gate 100% avalanche tested ID = 50A

50A 60V 50N06B N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features R =10.5m @ V =10V DS(on) GS Lead free and green device available Low Rds-on to minimize conductive loss High avalanche current 2. Applications Power supply UPS Battery management system 3.Symbol Pin Function 1 Gate 2 Drain 3 Source 4 Drain 1of 6 Rev 1.1JAN2014

50A30V N-CHANNELMOSFET KIA50N03B KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features Advanced trenchprocess technology High density cell design for ultra lowon-resistance Fully characterized avalanche voltage and current 2. Features 50A, 30V, R (on) typ. =6.5m (typ.)@V =10 V DS GS Lowgate charge LowCrss Fast switching Improveddv/dt capability 3. Pinc

50 Amps, 30 Volts N-CHANNEL MOSFET 50N03 KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Features Advanced trench process technology High density cell design for ultra low on-resistance Fully characterized avalanche voltage and current 2.Applications VDSS=30V,RDS(on)=6.5m ,ID=50A Vds=30V RDS(ON)=6.5m (Max.),VGS@10V,Ids@30A RDS(