KIA50N06 PDF and Equivalents Search

 

KIA50N06 Specs and Replacement

Type Designator: KIA50N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO220M-SQ

KIA50N06 substitution

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KIA50N06 datasheet

 ..1. Size:1126K  1
 kia50n06.pdf pdf_icon

KIA50N06

KIA50N06 Pb KIA50N06 Pb Free Plating Product 50A,60V Heatsink Planar N-Channel Power MOSFET Features 2. Drain 50A, 60V, RDS(on) = 0.022 @VGS = 10 V BVDSS = 60V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF) RDS(ON) = 0.022 ohm Fast switching 1. Gate 100% avalanche tested ID = 50A ... See More ⇒

 0.1. Size:394K  kia
 kia50n06b.pdf pdf_icon

KIA50N06

50A 60V 50N06B N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features R =10.5m @ V =10V DS(on) GS Lead free and green device available Low Rds-on to minimize conductive loss High avalanche current 2. Applications Power supply UPS Battery management system 3.Symbol Pin Function 1 Gate 2 Drain 3 Source 4 Drain 1of 6 Rev 1.1JAN2014 ... See More ⇒

 7.1. Size:123K  kia
 kia50n03bd.pdf pdf_icon

KIA50N06

50A30V N-CHANNELMOSFET KIA50N03B KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features Advanced trenchprocess technology High density cell design for ultra lowon-resistance Fully characterized avalanche voltage and current 2. Features 50A, 30V, R (on) typ. =6.5m (typ.)@V =10 V DS GS Lowgate charge LowCrss Fast switching Improveddv/dt capability 3. Pinc... See More ⇒

 7.2. Size:6996K  kia
 kia50n03.pdf pdf_icon

KIA50N06

50 Amps, 30 Volts N-CHANNEL MOSFET 50N03 KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Features Advanced trench process technology High density cell design for ultra low on-resistance Fully characterized avalanche voltage and current 2.Applications VDSS=30V,RDS(on)=6.5m ,ID=50A Vds=30V RDS(ON)=6.5m (Max.),VGS@10V,Ids@30A RDS(... See More ⇒

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Detailed specifications: HY1001P, HY3610P, ISA07N65A, JCS13N50FT, JCS3205CH, JCS3205SH, KIA2906A-220, KIA2906A-247, AO3407, NTD4963NG, PFP13N60, PFF13N60, QM3054M6, SVD730D, SVD730F, SVD730T, TP0202T

Keywords - KIA50N06 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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