HY3403V MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HY3403V
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 469 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Encapsulados: TO251
Búsqueda de reemplazo de HY3403V MOSFET
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HY3403V datasheet
hy3403d hy3403u hy3403v.pdf
HY3403D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/100A RDS(ON)= 2.4m (typ.)@VGS = 10V RDS(ON)= 2.9m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Systems High Frequency Synchronous Buck Converters for Computer P
hy3403.pdf
HY3403D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/100A RDS(ON)= 2.4m (typ.)@VGS = 10V RDS(ON)= 2.9m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Systems High Frequency Synchronous Buck Converters for Computer P
hy3403p hy3403b.pdf
HY3403P/B N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/140A RDS(ON)=2.2m (typ.)@VGS = 10V RDS(ON)=2.7m (typ.) @VGS =4.5V 100% avalanche tested S GD Excellent CdV/dt effect decline Lead- Free Device Available GDS TO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DC N-Channel MOSFET Ordering and Marking Infor
hy3408.pdf
HY3408P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage 25 TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range -55 to 175 C IS Diode Continuous Forward Current TC=25 C 140 A Mounted on Large Heat Sink IDM Pulsed Drain Current * TC
Otros transistores... UT70N03G , DG4N65-TO251 , DG4N65-TO252 , DG4N65-TO220 , DG4N65-TO220F , DG4N65-TO262 , HY3403D , HY3403U , IRLB3034 , HY3410P , HY3410M , HY3410B , HY3410PS , HY3410PM , HY3410MF , JCS3910V , JCS3910R .
History: S2N7002K | BRFL65R160C
History: S2N7002K | BRFL65R160C
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