HY3403V MOSFET Datasheet: N-Ch, 30V, 100A. Full specification with pinout and replacement list

HY3403V Specs and Replacement

Type Designator: HY3403V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 469 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO251

HY3403V substitution

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HY3403V datasheet

..1. Size:784K hymexa
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HY3403D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/100A RDS(ON)= 2.4m (typ.)@VGS = 10V RDS(ON)= 2.9m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Systems High Frequency Synchronous Buck Converters for Computer P... See More ⇒

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HY3403P/B N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/140A RDS(ON)=2.2m (typ.)@VGS = 10V RDS(ON)=2.7m (typ.) @VGS =4.5V 100% avalanche tested S GD Excellent CdV/dt effect decline Lead- Free Device Available GDS TO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DC N-Channel MOSFET Ordering and Marking Infor... See More ⇒

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HY3408P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage 25 TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range -55 to 175 C IS Diode Continuous Forward Current TC=25 C 140 A Mounted on Large Heat Sink IDM Pulsed Drain Current * TC... See More ⇒