HY3210P Todos los transistores

 

HY3210P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HY3210P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 237 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 902 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
   Paquete / Cubierta: TO220FB
 

 Búsqueda de reemplazo de HY3210P MOSFET

   - Selección ⓘ de transistores por parámetros

 

HY3210P Datasheet (PDF)

 ..1. Size:4740K  1
 hy3210p hy3210m hy3210b hy3210ps hy3210pm.pdf pdf_icon

HY3210P

HY3210P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionF eatures 100V/120ARDS(ON)= 6.8 m (typ.) @ VGS=10VS DS100% avalanche testedD GGSD Reliable and RuggedG TO-220FB-3L TO-220FB-3MTO-220FB-3L TO-220FB-3MTO-263-2LTO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsATO-3PS-3L TO-3PS-3MTO-3PS-

 ..2. Size:4740K  hymexa
 hy3210p hy3210m hy3210b hy3210ps hy3210pm.pdf pdf_icon

HY3210P

HY3210P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionF eatures 100V/120ARDS(ON)= 6.8 m (typ.) @ VGS=10VS DS100% avalanche testedD GGSD Reliable and RuggedG TO-220FB-3L TO-220FB-3MTO-220FB-3L TO-220FB-3MTO-263-2LTO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsATO-3PS-3L TO-3PS-3MTO-3PS-

 ..3. Size:390K  hymexa
 hy3210p hy3210b.pdf pdf_icon

HY3210P

HY3210P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 100V/120ARDS(ON)=6.8m(typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPackage C

 9.1. Size:1565K  1
 hy3215w.pdf pdf_icon

HY3210P

HY3215WN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/130ARDS(ON)=11.5m(typ.)@VGS =10V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices AvailableS(RoHS Compliant)DGTO-247A-3LApplications Brushless Motor Drive Electric Power SteeringN Channel MOSFETOrdering and Marking InformationPackage CodeWW : T

MOSTRAR MÁS

Otros transistores... JCS3910R , MMD65R900QRH , S68N08R , S68N08S , SVF10N65F , SVF10N65T , STD448S , CRTS084NE6N , IRF740 , HY3210M , HY3210B , HY3210PS , HY3210PM , JCS8N60S , JCS8N60B , JCS8N60C , JCS8N60F .

History: NP80N03KLE | IPP110N20N3 | IRHN57250SE | IRF7905 | MI4800 | NCE048N30Q | WML07N65C2

 

 
Back to Top

 


 
.