All MOSFET. HY3210P Datasheet

 

HY3210P MOSFET. Datasheet pdf. Equivalent

Type Designator: HY3210P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 237 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 120 nC

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 902 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm

Package: TO220FB

HY3210P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY3210P Datasheet (PDF)

0.1. hy3210p hy3210m hy3210b hy3210ps hy3210pm.pdf Size:4740K _1

HY3210P
HY3210P

HY3210P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionF eatures 100V/120ARDS(ON)= 6.8 m (typ.) @ VGS=10VS DS100% avalanche testedD GGSD Reliable and RuggedG TO-220FB-3L TO-220FB-3MTO-220FB-3L TO-220FB-3MTO-263-2LTO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsATO-3PS-3L TO-3PS-3MTO-3PS-

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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