HY3210M Todos los transistores

 

HY3210M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HY3210M

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 237 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 902 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm

Encapsulados: TO220FB

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HY3210M datasheet

 ..1. Size:4740K  1
hy3210p hy3210m hy3210b hy3210ps hy3210pm.pdf pdf_icon

HY3210M

HY3210P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description F eatures 100V/120A RDS(ON)= 6.8 m (typ.) @ VGS=10V S D S 100% avalanche tested D G G S D Reliable and Rugged G TO-220FB-3L TO-220FB-3M TO-220FB-3L TO-220FB-3M TO-263-2L TO-263-2L Lead Free and Green Devices Available (RoHS Compliant) S D G S D G pplications A TO-3PS-3L TO-3PS-3M TO-3PS-

 ..2. Size:4740K  hymexa
hy3210p hy3210m hy3210b hy3210ps hy3210pm.pdf pdf_icon

HY3210M

HY3210P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description F eatures 100V/120A RDS(ON)= 6.8 m (typ.) @ VGS=10V S D S 100% avalanche tested D G G S D Reliable and Rugged G TO-220FB-3L TO-220FB-3M TO-220FB-3L TO-220FB-3M TO-263-2L TO-263-2L Lead Free and Green Devices Available (RoHS Compliant) S D G S D G pplications A TO-3PS-3L TO-3PS-3M TO-3PS-

 8.1. Size:390K  hymexa
hy3210p hy3210b.pdf pdf_icon

HY3210M

HY3210P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/120A RDS(ON)=6.8m (typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application Uninterruptible Power Supply N-Channel MOSFET Ordering and Marking Information Package C

 9.1. Size:1565K  1
hy3215w.pdf pdf_icon

HY3210M

HY3215W N-Channel Enhancement Mode MOSFET Feature Pin Description 150V/130A RDS(ON)=11.5m (typ.)@VGS =10V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available S (RoHS Compliant) D G TO-247A-3L Applications Brushless Motor Drive Electric Power Steering N Channel MOSFET Ordering and Marking Information Package Code W W T

Otros transistores... MMD65R900QRH , S68N08R , S68N08S , SVF10N65F , SVF10N65T , STD448S , CRTS084NE6N , HY3210P , IRF840 , HY3210B , HY3210PS , HY3210PM , JCS8N60S , JCS8N60B , JCS8N60C , JCS8N60F , ME4953 .

 

 

 


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