HY3210M Datasheet and Replacement
Type Designator: HY3210M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 237 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 902 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO220FB
HY3210M substitution
HY3210M Datasheet (PDF)
hy3210p hy3210m hy3210b hy3210ps hy3210pm.pdf

HY3210P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionF eatures 100V/120ARDS(ON)= 6.8 m (typ.) @ VGS=10VS DS100% avalanche testedD GGSD Reliable and RuggedG TO-220FB-3L TO-220FB-3MTO-220FB-3L TO-220FB-3MTO-263-2LTO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsATO-3PS-3L TO-3PS-3MTO-3PS-
hy3210p hy3210m hy3210b hy3210ps hy3210pm.pdf

HY3210P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionF eatures 100V/120ARDS(ON)= 6.8 m (typ.) @ VGS=10VS DS100% avalanche testedD GGSD Reliable and RuggedG TO-220FB-3L TO-220FB-3MTO-220FB-3L TO-220FB-3MTO-263-2LTO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsATO-3PS-3L TO-3PS-3MTO-3PS-
hy3210p hy3210b.pdf

HY3210P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 100V/120ARDS(ON)=6.8m(typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPackage C
hy3215w.pdf

HY3215WN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/130ARDS(ON)=11.5m(typ.)@VGS =10V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices AvailableS(RoHS Compliant)DGTO-247A-3LApplications Brushless Motor Drive Electric Power SteeringN Channel MOSFETOrdering and Marking InformationPackage CodeWW : T
Datasheet: MMD65R900QRH , S68N08R , S68N08S , SVF10N65F , SVF10N65T , STD448S , CRTS084NE6N , HY3210P , IRF840 , HY3210B , HY3210PS , HY3210PM , JCS8N60S , JCS8N60B , JCS8N60C , JCS8N60F , ME4953 .
History: BLF6G20LS-180RN | IPP90N06S4-04 | STU10L01 | IRF200B211 | AFN3684S | FQD6N25TF | 2N6768JANTXV
Keywords - HY3210M MOSFET datasheet
HY3210M cross reference
HY3210M equivalent finder
HY3210M lookup
HY3210M substitution
HY3210M replacement
History: BLF6G20LS-180RN | IPP90N06S4-04 | STU10L01 | IRF200B211 | AFN3684S | FQD6N25TF | 2N6768JANTXV



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