JCS8N60B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JCS8N60B  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 147 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 115 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: TO262

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JCS8N60B datasheet

 ..1. Size:616K  1
 jcs8n60s jcs8n60b jcs8n60c jcs8n60f.pdf pdf_icon

JCS8N60B

N R N-CHANNEL MOSFET JCS8N60 Package MAIN CHARACTERISTICS 7.5 A ID 600 V VDSS Rdson 1.2 @Vgs=10V 54 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA

 0.1. Size:1084K  jilin sino
 jcs8n60vc jcs8n60rc jcs8n60bc jcs8n60sc jcs8n60cc jcs8n60fc.pdf pdf_icon

JCS8N60B

N R N-CHANNEL MOSFET JCS8N60C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 600 V Rdson 1.6 @Vgs=10V Qg 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATU

 0.2. Size:809K  jilin sino
 jcs8n60bb jcs8n60sb jcs8n60cb jcs8n60fb.pdf pdf_icon

JCS8N60B

N R N-CHANNEL MOSFET JCS8N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

 7.1. Size:837K  jilin sino
 jcs8n60f.pdf pdf_icon

JCS8N60B

MOSTRAR MÁS

Otros transistores... STD448S, CRTS084NE6N, HY3210P, HY3210M, HY3210B, HY3210PS, HY3210PM, JCS8N60S, 50N06, JCS8N60C, JCS8N60F, ME4953, SI4914DY, SSP60N05, SSP60N06, SUV90N06-05, SVF740T