JCS8N60B MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS8N60B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 147 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 7.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 54 nC
Rise Time (tr): 80 nS
Drain-Source Capacitance (Cd): 115 pF
Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
Package: TO262
JCS8N60B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS8N60B Datasheet (PDF)
0.1. jcs8n60s jcs8n60b jcs8n60c jcs8n60f.pdf 
Size:616K _1
N RN-CHANNEL MOSFETJCS8N60 Package MAIN CHARACTERISTICS 7.5 A ID 600 V VDSS Rdson 1.2 @Vgs=10V 54 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA
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