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AOB9N70 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOB9N70
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 236 W
   Voltaje máximo drenador - fuente |Vds|: 700 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 9 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 28.5 nC
   Tiempo de subida (tr): 61 nS
   Conductancia de drenaje-sustrato (Cd): 113 pF
   Resistencia entre drenaje y fuente RDS(on): 1.2 Ohm
   Paquete / Cubierta: TO263

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AOB9N70 Datasheet (PDF)

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aot9n70 aotf9n70 aob9n70.pdf

AOB9N70
AOB9N70

AOT9N70/AOTF9N70/AOB9N70700V, 9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT9N70 & AOTF9N70 & AOB9N70 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 ..2. Size:255K  inchange semiconductor
aob9n70.pdf

AOB9N70
AOB9N70

isc N-Channel MOSFET Transistor AOB9N70FEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

 0.1. Size:403K  aosemi
aob9n70l.pdf

AOB9N70
AOB9N70

AOT9N70/AOTF9N70/AOB9N70700V, 9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT9N70 & AOTF9N70 & AOB9N70 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 0.2. Size:255K  inchange semiconductor
aob9n70l.pdf

AOB9N70
AOB9N70

isc N-Channel MOSFET Transistor AOB9N70LFEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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