AOB9N70 MOSFET Datasheet: N-Ch, 700V, 9A. Full specification with pinout and replacement list

AOB9N70 Specs and Replacement

Type Designator: AOB9N70

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 236 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 113 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO263

AOB9N70 substitution

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AOB9N70 datasheet

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AOT9N70/AOTF9N70/AOB9N70 700V, 9A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT9N70 & AOTF9N70 & AOB9N70 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) ... See More ⇒

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isc N-Channel MOSFET Transistor AOB9N70 FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a... See More ⇒

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