AOTF29S50L Todos los transistores

 

AOTF29S50L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOTF29S50L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 29 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.9 V
   Qgⓘ - Carga de la puerta: 26.6 nC
   trⓘ - Tiempo de subida: 39 nS
   Cossⓘ - Capacitancia de salida: 88 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: TO220F

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AOTF29S50L Datasheet (PDF)

 ..1. Size:441K  1
aot29s50l aob29s50l aotf29s50l aotf29s50.pdf

AOTF29S50L
AOTF29S50L

AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50TM500V 29A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 600VThe AOT29S50L & AOB29S50L & AOTF29S50L &AOTF29S50 have been fabricated using the advanced IDM 120AMOSTM high voltage process that is designed to deliver high RDS(ON),max 0.15levels of performance and robustness in switching Qg,typ 26.6nCappl

 ..2. Size:252K  inchange semiconductor
aotf29s50l.pdf

AOTF29S50L
AOTF29S50L

isc N-Channel MOSFET Transistor AOTF29S50LFEATURESDrain Current I = 29A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 5.1. Size:324K  aosemi
aotf29s50.pdf

AOTF29S50L
AOTF29S50L

AOT29S50/AOB29S50/AOTF29S50TM500V 29A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 600VThe AOT29S50 & AOB29S50 & AOTF29S50 have beenfabricated using the advanced MOSTM high voltage IDM 120Aprocess that is designed to deliver high levels of RDS(ON),max 0.15performance and robustness in switching applications. Qg,typ 26.6nCBy provi

 5.2. Size:252K  inchange semiconductor
aotf29s50.pdf

AOTF29S50L
AOTF29S50L

isc N-Channel MOSFET Transistor AOTF29S50FEATURESDrain Current I = 29A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 8.1. Size:381K  aosemi
aob2910l aot2910l aotf2910l.pdf

AOTF29S50L
AOTF29S50L

AOT2910L/AOB2910L/AOTF2910L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2910L & AOB2910L & AOTF2910L uses trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.2. Size:434K  aosemi
aotf2910l.pdf

AOTF29S50L
AOTF29S50L

AOT2910L/AOB2910L/AOTF2910L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2910L & AOB2910L & AOTF2910L uses trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.3. Size:378K  aosemi
aotf298l.pdf

AOTF29S50L
AOTF29S50L

AOT298L/AOB298L/AOTF298L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT298L & AOB298L & AOTF298L uses Trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 58A/33Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.4. Size:409K  aosemi
aotf2916l.pdf

AOTF29S50L
AOTF29S50L

AOT2916L/AOTF2916L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2916L & AOTF2916L uses trench MOSFET 100Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 23A / 17Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 8.5. Size:381K  aosemi
aotf2918l.pdf

AOTF29S50L
AOTF29S50L

AOT2918L/AOB2918L/AOTF2918L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2918L & AOB2918L & AOTF2918L uses Trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 90Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.6. Size:440K  aosemi
aotf292l.pdf

AOTF29S50L
AOTF29S50L

AOT292L/AOB292L/AOTF292LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V)

 8.7. Size:323K  aosemi
aotf290l.pdf

AOTF29S50L
AOTF29S50L

AOTF290L100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 72A Low Gate Charge RDS(ON) (at VGS=10V)

 8.8. Size:345K  aosemi
aot2916l aotf2916l.pdf

AOTF29S50L
AOTF29S50L

AOT2916L/AOTF2916L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2916L & AOTF2916L uses trench MOSFET 100Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 23A / 17Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 8.9. Size:581K  aosemi
aotf296l.pdf

AOTF29S50L
AOTF29S50L

AOTF296L100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 41A Low Gate Charge RDS(ON) (at VGS=10V)

 8.10. Size:236K  inchange semiconductor
aotf2910l.pdf

AOTF29S50L
AOTF29S50L

isc N-Channel MOSFET Transistor AOTF2910LFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

 8.11. Size:235K  inchange semiconductor
aotf298l.pdf

AOTF29S50L
AOTF29S50L

isc N-Channel MOSFET Transistor AOTF298LFEATURESDrain Current I = 33A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 14.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andge

 8.12. Size:275K  inchange semiconductor
aotf2916l.pdf

AOTF29S50L
AOTF29S50L

isc N-Channel MOSFET Transistor AOTF2916LFEATURES Drain-source on-resistance:RDS(on) 34m@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 V

 8.13. Size:236K  inchange semiconductor
aotf2918l.pdf

AOTF29S50L
AOTF29S50L

isc N-Channel MOSFET Transistor AOTF2918LFEATURESDrain Current I = 58A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 8.14. Size:235K  inchange semiconductor
aotf292l.pdf

AOTF29S50L
AOTF29S50L

isc N-Channel MOSFET Transistor AOT292LFEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 8.15. Size:236K  inchange semiconductor
aotf290l.pdf

AOTF29S50L
AOTF29S50L

isc N-Channel MOSFET Transistor AOTF290LFEATURESDrain Current I = 72A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

 8.16. Size:235K  inchange semiconductor
aotf296l.pdf

AOTF29S50L
AOTF29S50L

isc N-Channel MOSFET Transistor AOTF296LFEATURESDrain Current I = 41A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

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