AOTF29S50L Todos los transistores

 ..1. Size:441K  1
 aot29s50l aob29s50l aotf29s50l aotf29s50.pdf

AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50L & AOB29S50L & AOTF29S50L & AOTF29S50 have been fabricated using the advanced IDM 120A MOSTM high voltage process that is designed to deliver high RDS(ON),max 0.15 levels of performance and robustness in switching Qg,typ 26.6nC appl

 ..2. Size:992K  aosemi
 aot29s50l aob29s50l aotf29s50l aotf29s50.pdf

AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50L & AOB29S50L & AOTF29S50L & AOTF29S50 have been fabricated using the advanced IDM 120A MOSTM high voltage process that is designed to deliver high RDS(ON),max 0.15 levels of performance and robustness in switching Qg,typ 26.6nC appl

 ..3. Size:252K  inchange semiconductor
 aotf29s50l.pdf

isc N-Channel MOSFET Transistor AOTF29S50L FEATURES Drain Current I = 29A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 5.1. Size:324K  aosemi
 aotf29s50.pdf

AOT29S50/AOB29S50/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50 & AOB29S50 & AOTF29S50 have been fabricated using the advanced MOSTM high voltage IDM 120A process that is designed to deliver high levels of RDS(ON),max 0.15 performance and robustness in switching applications. Qg,typ 26.6nC By provi

 5.2. Size:252K  inchange semiconductor
 aotf29s50.pdf

isc N-Channel MOSFET Transistor AOTF29S50 FEATURES Drain Current I = 29A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 8.1. Size:381K  aosemi
 aob2910l aot2910l aotf2910l.pdf

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.2. Size:434K  aosemi
 aotf2910l.pdf

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.3. Size:378K  aosemi
 aotf298l.pdf

AOT298L/AOB298L/AOTF298L 100V N-Channel MOSFET General Description Product Summary VDS The AOT298L & AOB298L & AOTF298L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 58A/33A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.4. Size:434K  aosemi
 aot2910l aob2910l aotf2910l.pdf

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.5. Size:409K  aosemi
 aotf2916l.pdf

AOT2916L/AOTF2916L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2916L & AOTF2916L uses trench MOSFET 100V technology that is uniquely optimized to provide the most ID (at VGS=10V) 23A / 17A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 8.6. Size:381K  aosemi
 aotf2918l.pdf

AOT2918L/AOB2918L/AOTF2918L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2918L & AOB2918L & AOTF2918L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 90A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.7. Size:479K  aosemi
 aot292l aob292l aotf292l.pdf

AOT292L/AOB292L/AOTF292L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V)

 8.8. Size:440K  aosemi
 aotf292l.pdf

AOT292L/AOB292L/AOTF292L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V)

 8.9. Size:323K  aosemi
 aotf290l.pdf

AOTF290L 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 72A Low Gate Charge RDS(ON) (at VGS=10V)

 8.10. Size:345K  aosemi
 aot2916l aotf2916l.pdf

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 aotf296l.pdf

AOTF296L 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 41A Low Gate Charge RDS(ON) (at VGS=10V)

 8.12. Size:236K  inchange semiconductor
 aotf2910l.pdf

isc N-Channel MOSFET Transistor AOTF2910L FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

 8.13. Size:235K  inchange semiconductor
 aotf298l.pdf

isc N-Channel MOSFET Transistor AOTF298L FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 14.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and ge

 8.14. Size:275K  inchange semiconductor
 aotf2916l.pdf

isc N-Channel MOSFET Transistor AOTF2916L FEATURES Drain-source on-resistance RDS(on) 34m @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High fast switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V

 8.15. Size:236K  inchange semiconductor
 aotf2918l.pdf

isc N-Channel MOSFET Transistor AOTF2918L FEATURES Drain Current I = 58A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

 8.16. Size:235K  inchange semiconductor
 aotf292l.pdf

isc N-Channel MOSFET Transistor AOT292L FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

 8.17. Size:236K  inchange semiconductor
 aotf290l.pdf

isc N-Channel MOSFET Transistor AOTF290L FEATURES Drain Current I = 72A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

 8.18. Size:235K  inchange semiconductor
 aotf296l.pdf

isc N-Channel MOSFET Transistor AOTF296L FEATURES Drain Current I = 41A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene