SML60T38 Todos los transistores

 

SML60T38 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SML60T38

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 520 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 7410 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: TO247

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SML60T38 datasheet

 ..1. Size:19K  semelab
sml60t38.pdf pdf_icon

SML60T38

SML60T38 T247clip Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE 5.38 (0.212) 6.20 (0.244) HIGH VOLTAGE POWER MOSFETS 2 VDSS 600V 1 2 3 2.87 (0.113) ID(cont) 38A 0.40 (0.016) 3.12 (0.123) 0.79 (0.031) 1.65 (0.065) 2.13 (0.084) RDS(on) 0.150 1.01 (0.040) 1.40 (0.055

 9.1. Size:20K  semelab
sml60l38.pdf pdf_icon

SML60T38

SML60L38 TO 264AA Package Outline. Dimensions in mm (inches) 1.80 (0.071) 2.01 (0.079) N CHANNEL 4.60 (0.181) 19.51 (0.768) 5.21 (0.205) 26.49 (0.807) 3.10 (0.122) ENHANCEMENT MODE 3.48 (0.137) HIGH VOLTAGE POWER MOSFETS VDSS 600V 1 2 3 2.29 (0.090) ID(cont) 38A 2.69 (0.106) 2.79 (0.110) 3.18 (0.125) RDS(on) 0.150 0.48 (0.019) 0.76 (0.030) 0.84 (0.033) 1.30 (0.051)

 9.2. Size:24K  semelab
sml60j62.pdf pdf_icon

SML60T38

SML60J62 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3 V

 9.3. Size:26K  semelab
sml60w32.pdf pdf_icon

SML60T38

SML60W32 TO 267 Package Outline. Dimensions in mm (inches) N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 600V ID(cont) 31.5A RDS(on) 0.170 Faster Switching Lower Leakage TO 267 Hermetic Package D StarMOS is a new generation of high voltage N Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, G increas

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