AOTF9N70L Todos los transistores

 ..1. Size:252K  inchange semiconductor
 aotf9n70l.pdf

isc N-Channel MOSFET Transistor AOTF9N70L FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 6.1. Size:403K  1
 aot9n70 aotf9n70 aob9n70.pdf

AOT9N70/AOTF9N70/AOB9N70 700V, 9A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT9N70 & AOTF9N70 & AOB9N70 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 6.2. Size:528K  aosemi
 aotf9n70.pdf

AOT9N70/AOTF9N70 700V, 9A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT9N70 & AOTF9N70 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 9A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 6.3. Size:403K  aosemi
 aot9n70 aotf9n70 aob9n70.pdf

AOT9N70/AOTF9N70/AOB9N70 700V, 9A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT9N70 & AOTF9N70 & AOB9N70 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 6.4. Size:252K  inchange semiconductor
 aotf9n70.pdf

isc N-Channel MOSFET Transistor AOTF9N70 FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose