Справочник MOSFET. AOTF9N70L

 

AOTF9N70L Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AOTF9N70L
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 27.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 61 ns
   Cossⓘ - Выходная емкость: 113 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для AOTF9N70L

   - подбор ⓘ MOSFET транзистора по параметрам

 

AOTF9N70L Datasheet (PDF)

 ..1. Size:252K  inchange semiconductor
aotf9n70l.pdfpdf_icon

AOTF9N70L

isc N-Channel MOSFET Transistor AOTF9N70LFEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 6.1. Size:403K  1
aot9n70 aotf9n70 aob9n70.pdfpdf_icon

AOTF9N70L

AOT9N70/AOTF9N70/AOB9N70700V, 9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT9N70 & AOTF9N70 & AOB9N70 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 6.2. Size:528K  aosemi
aotf9n70.pdfpdf_icon

AOTF9N70L

AOT9N70/AOTF9N70700V, 9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT9N70 & AOTF9N70 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 9Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 6.3. Size:252K  inchange semiconductor
aotf9n70.pdfpdf_icon

AOTF9N70L

isc N-Channel MOSFET Transistor AOTF9N70FEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Другие MOSFET... SI4914DY , SSP60N05 , SSP60N06 , SUV90N06-05 , SVF740T , SVF740F , AOB9N70 , AOTF29S50L , IRFB4110 , AOW66412 , FMV60N190S2HF , JCS650C , JCS650F , JCS650S , R6002END3 , R6003KND3 , R6004JND3 .

History: 18N10W | SFT016N80C3 | GSM4422 | STFU16N65M2 | SWN6N70DA | IRFBC30P

 

 
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