R6004JNJ Todos los transistores

 ..1. Size:2263K  1
 r6004jnj.pdf

R6004JNJ Datasheet Nch 600V 4A Power MOSFET lOutline l LPT(S) VDSS 600V RDS(on)(Max.) 1.43 ID 4A PD 60W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPacka

 ..2. Size:254K  inchange semiconductor
 r6004jnj.pdf

isc N-Channel MOSFET Transistor R6004JNJ FEATURES Drain Current I =4A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 1.43 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 7.1. Size:2220K  1
 r6004jnx.pdf

R6004JNX Datasheet Nch 600V 4A Power MOSFET lOutline l TO-220FM VDSS 600V RDS(on)(Max.) 1.43 ID 4A PD 35W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPac

 7.2. Size:1485K  1
 r6004jnd3.pdf

R6004JND3 Datasheet Nch 600V 4A Power MOSFET lOutline l TO-252 VDSS 600V RDS(on)(Max.) 1.43 ID 4A PD 60W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPack

 7.3. Size:252K  inchange semiconductor
 r6004jnx.pdf

isc N-Channel MOSFET Transistor R6004JNX FEATURES Drain Current I =4A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 1.43 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 7.4. Size:265K  inchange semiconductor
 r6004jnd3.pdf

isc N-Channel MOSFET Transistor R6004JND3 FEATURES Drain Current I =4A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 1.43 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos