R6006JND3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: R6006JND3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 86 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.936 Ohm
   Paquete / Cubierta: TO252

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R6006JND3 Datasheet (PDF)

..1. Size:1484K 1
r6006jnd3.pdf

R6006JND3DatasheetNch 600V 6A Power MOSFETlOutlinel TO-252VDSS600VRDS(on)(Max.)0.936ID6APD86W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPac

..2. Size:266K inchange semiconductor
r6006jnd3.pdf

isc N-Channel MOSFET Transistor R6006JND3FEATURESDrain Current I =6A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 936m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

7.1. Size:2249K 1
r6006jnj.pdf

R6006JNJDatasheetNch 600V 6A Power MOSFETlOutlinel LPT(S)VDSS600VRDS(on)(Max.)0.936ID6APD86W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPack

7.2. Size:2207K 1
r6006jnx.pdf

R6006JNXDatasheetNch 600V 6A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)0.936ID6APD43W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPa

7.3. Size:255K inchange semiconductor
r6006jnj.pdf

isc N-Channel MOSFET Transistor R6006JNJFEATURESDrain Current I =6A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 936m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

7.4. Size:252K inchange semiconductor
r6006jnx.pdf

isc N-Channel MOSFET Transistor R6006JNXFEATURESDrain Current I =6A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 936m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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