R6006JND3 Datasheet and Replacement

R6006JND3DatasheetNch 600V 6A Power MOSFETlOutlinel TO-252VDSS600VRDS(on)(Max.)0.936ID6APD86W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPac

isc N-Channel MOSFET Transistor R6006JND3FEATURESDrain Current I =6A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 936m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

R6006JNJDatasheetNch 600V 6A Power MOSFETlOutlinel LPT(S)VDSS600VRDS(on)(Max.)0.936ID6APD86W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPack

R6006JNXDatasheetNch 600V 6A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)0.936ID6APD43W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPa

isc N-Channel MOSFET Transistor R6006JNJFEATURESDrain Current I =6A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 936m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor R6006JNXFEATURESDrain Current I =6A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 936m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose