R6006JNJ Todos los transistores

R6006JNJ Datasheet Nch 600V 6A Power MOSFET lOutline l LPT(S) VDSS 600V RDS(on)(Max.) 0.936 ID 6A PD 86W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPack

isc N-Channel MOSFET Transistor R6006JNJ FEATURES Drain Current I =6A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 936m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

R6006JND3 Datasheet Nch 600V 6A Power MOSFET lOutline l TO-252 VDSS 600V RDS(on)(Max.) 0.936 ID 6A PD 86W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPac

R6006JNX Datasheet Nch 600V 6A Power MOSFET lOutline l TO-220FM VDSS 600V RDS(on)(Max.) 0.936 ID 6A PD 43W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPa

isc N-Channel MOSFET Transistor R6006JND3 FEATURES Drain Current I =6A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 936m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

isc N-Channel MOSFET Transistor R6006JNX FEATURES Drain Current I =6A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 936m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose